The role of sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength gainnas/gaas quantum well with high indium content
文献类型：期刊论文
| 作者 | Wu, DH; Niu, ZC; Zhang, SY; Ni, HQ; He, ZH; Sun, Z; Han, Q; Wu, RH |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-05-01 |
| 卷号 | 290期号:2页码:494-497 |
| 关键词 | Photoluminescence Molecular beam epitaxy Quantum wells Nitrides Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.02.002 |
| 通讯作者 | Wu, dh(wudonghai@red.semi.ac.cn) |
| 英文摘要 | Sb-assisted gainnas/gaas quantum wells (qws) with high (42.5%) indium content were investigated systematically. transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (pl) measurements reveal that sb acts as a surfactant to suppress three-dimensional growth. the improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in n composition. the pl intensity and the full-width at half maximum of the 1.55 mu m single-qw were comparable with that of the 1.3 am qws. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | IMPROVED LUMINESCENCE EFFICIENCY ; LASER-DIODES ; TEMPERATURE ; SURFACTANT ; EMISSION ; NITROGEN ; ORIGIN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000237156400033 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426815 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu, DH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, DH,Niu, ZC,Zhang, SY,et al. The role of sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength gainnas/gaas quantum well with high indium content[J]. Journal of crystal growth,2006,290(2):494-497. |
| APA | Wu, DH.,Niu, ZC.,Zhang, SY.,Ni, HQ.,He, ZH.,...&Wu, RH.(2006).The role of sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength gainnas/gaas quantum well with high indium content.Journal of crystal growth,290(2),494-497. |
| MLA | Wu, DH,et al."The role of sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength gainnas/gaas quantum well with high indium content".Journal of crystal growth 290.2(2006):494-497. |
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来源：半导体研究所
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