Resonant tunnelling diodes and high electron mobility transistors integrated on gaas substrates
文献类型：期刊论文
| 作者 | Huang, YL; Ma, L; Yang, FH; Wang, LC; Zeng, YP |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2006-03-01 |
| 卷号 | 23期号:3页码:697-700 |
| ISSN号 | 0256-307X |
| 通讯作者 | Huang, yl(hy196@red.semi.ac.cn) |
| 英文摘要 | A1gaas/1ngaas high electron mobility transistors (hemts) and alas/gaas resonant tunnelling diodes (rtds) are integrated on gaas substrates. molecular beam epitaxy is used to grow the rtd on the hemt structure. the current-voltage characteristics of the rtd and hemt are obtained on a two-inch wafer. at room temperature, the peak-valley, current ratio and the peak voltage are about 4.8 and 0.44 v, respectivcly the hemt is characterized by a, gate length of 1 mu m, a, maximum transconductance of 125 ms/mm, and a threshold voltage of -1.0 v. the current-voltage, characteristics of the series-connected rtds are presented. tire current-voltage curves of the parallel connection of one rtd and one hemt are also presented. |
| WOS关键词 | HETEROSTRUCTURE ; OUTPUT |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | CHINESE PHYSICAL SOC |
| WOS记录号 | WOS:000235928800048 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426817 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, YL |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, YL,Ma, L,Yang, FH,et al. Resonant tunnelling diodes and high electron mobility transistors integrated on gaas substrates[J]. Chinese physics letters,2006,23(3):697-700. |
| APA | Huang, YL,Ma, L,Yang, FH,Wang, LC,&Zeng, YP.(2006).Resonant tunnelling diodes and high electron mobility transistors integrated on gaas substrates.Chinese physics letters,23(3),697-700. |
| MLA | Huang, YL,et al."Resonant tunnelling diodes and high electron mobility transistors integrated on gaas substrates".Chinese physics letters 23.3(2006):697-700. |
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来源：半导体研究所
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