Synthesis of radial-aligned gan nanorods by ammoniating ga2o3 films on mg layer deposited on si(111) substrates
文献类型：期刊论文
| 作者 | Tian, DH; Xue, CS; Zhuang, HZ; Wu, YX; Liu, YA; He, JT; Wang, FX; Sun, LL |
| 刊名 | Materials letters
 |
| 出版日期 | 2006-05-01 |
| 卷号 | 60期号:9-10页码:1229-1232 |
| 关键词 | Gan Radial-aligned Ammoniating progress Single crystal |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2005.11.025 |
| 通讯作者 | Xue, cs(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Radial-aligned gan nanorods were synthesized by ammoniating ga2o3 films on mg layer deposited on si(111) substrates. the products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), fourier transformed infrared spectra (ftir) and high-resolution transmission electron microscopy (hrtem). the sem images indicated that the products consisted of radial-aligned gan nanorods. the xrd and the selective area electron diffraction (saed) patterns showed that nanorods were hexagonal gan single crystals. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | NANOWIRES ; GROWTH ; CARBON ; ARRAYS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000235439900028 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426819 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, CS |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Funct Mat Lab, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tian, DH,Xue, CS,Zhuang, HZ,et al. Synthesis of radial-aligned gan nanorods by ammoniating ga2o3 films on mg layer deposited on si(111) substrates[J]. Materials letters,2006,60(9-10):1229-1232. |
| APA | Tian, DH.,Xue, CS.,Zhuang, HZ.,Wu, YX.,Liu, YA.,...&Sun, LL.(2006).Synthesis of radial-aligned gan nanorods by ammoniating ga2o3 films on mg layer deposited on si(111) substrates.Materials letters,60(9-10),1229-1232. |
| MLA | Tian, DH,et al."Synthesis of radial-aligned gan nanorods by ammoniating ga2o3 films on mg layer deposited on si(111) substrates".Materials letters 60.9-10(2006):1229-1232. |
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来源：半导体研究所
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