Growth of high quality semi-insulating inp single crystal by suppression of compensation defects
文献类型：期刊论文
| 作者 | Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX |
| 刊名 | Journal of rare earths
 |
| 出版日期 | 2006-03-01 |
| 卷号 | 24页码:75-77 |
| 关键词 | Indium phosphide Defect Semi-insualting |
| ISSN号 | 1002-0721 |
| 通讯作者 | Zhao, yw(zhaoyw@red.semi.ac.cn) |
| 英文摘要 | Deep level defects in as-grown and annealed si-inp samples were investigated by thermally stimulated current spectroscopy. correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in si-inp were revealed. an optimized crystal growth condition for high quality si-inp was demonstrated based on the experimental results. |
| WOS关键词 | STIMULATED CURRENT SPECTROSCOPY ; CURRENT TRANSIENT SPECTROSCOPY ; SEMI-INSULATING INP ; DEEP-LEVEL DEFECTS ; FE |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000237331400022 |
| 出版者 | METALLURGICAL INDUSTRY PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426827 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, YW |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, ZY,Duan, ML,et al. Growth of high quality semi-insulating inp single crystal by suppression of compensation defects[J]. Journal of rare earths,2006,24:75-77. |
| APA | Zhao, YW,Dong, ZY,Duan, ML,Sun, WR,&Yang, ZX.(2006).Growth of high quality semi-insulating inp single crystal by suppression of compensation defects.Journal of rare earths,24,75-77. |
| MLA | Zhao, YW,et al."Growth of high quality semi-insulating inp single crystal by suppression of compensation defects".Journal of rare earths 24(2006):75-77. |
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来源：半导体研究所
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