中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser

文献类型:期刊论文

作者Wang, CL; Wang, YG; Ma, XY; Liu, Y; Sun, LQ; Tian, Q; Zang, ZG; Wang, QY
刊名Chinese physics letters
出版日期2006-03-01
卷号23期号:3页码:616-618
ISSN号0256-307X
通讯作者Wang, cl(chinawygxjw@yahoo.com.cn)
英文摘要We have demonstrated passive mode-locking in a diode-end-pumped nd:yvo4 laser using two kinds of semiconductor absorbers whose relaxation region comes from in0.25ga0.75as grown at low temperature (lt) and gaas/air interface respectively mode-locking, using absorbers of the gaas/air interface relaxation region, has the characteristics of less q-switching tendency and higher average output power than that using absorbers of lt in0.25ga0.75as relaxation region, but is not as stable as the latter.
WOS关键词SATURABLE ABSORBER ; MIRROR
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000235928800025
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426835
专题半导体研究所
通讯作者Wang, CL
作者单位1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Tsing Hua Univ, State Key Lab Precis Measurement Technol & Instru, Beijing 100084, Peoples R China
3.Tianjin Univ, Ultrafast Laser Lab, Sch Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China
推荐引用方式
GB/T 7714
Wang, CL,Wang, YG,Ma, XY,et al. Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser[J]. Chinese physics letters,2006,23(3):616-618.
APA Wang, CL.,Wang, YG.,Ma, XY.,Liu, Y.,Sun, LQ.,...&Wang, QY.(2006).Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser.Chinese physics letters,23(3),616-618.
MLA Wang, CL,et al."Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser".Chinese physics letters 23.3(2006):616-618.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。