Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser
文献类型:期刊论文
作者 | Wang, CL; Wang, YG; Ma, XY; Liu, Y; Sun, LQ; Tian, Q; Zang, ZG; Wang, QY |
刊名 | Chinese physics letters
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出版日期 | 2006-03-01 |
卷号 | 23期号:3页码:616-618 |
ISSN号 | 0256-307X |
通讯作者 | Wang, cl(chinawygxjw@yahoo.com.cn) |
英文摘要 | We have demonstrated passive mode-locking in a diode-end-pumped nd:yvo4 laser using two kinds of semiconductor absorbers whose relaxation region comes from in0.25ga0.75as grown at low temperature (lt) and gaas/air interface respectively mode-locking, using absorbers of the gaas/air interface relaxation region, has the characteristics of less q-switching tendency and higher average output power than that using absorbers of lt in0.25ga0.75as relaxation region, but is not as stable as the latter. |
WOS关键词 | SATURABLE ABSORBER ; MIRROR |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000235928800025 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426835 |
专题 | 半导体研究所 |
通讯作者 | Wang, CL |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Tsing Hua Univ, State Key Lab Precis Measurement Technol & Instru, Beijing 100084, Peoples R China 3.Tianjin Univ, Ultrafast Laser Lab, Sch Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, CL,Wang, YG,Ma, XY,et al. Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser[J]. Chinese physics letters,2006,23(3):616-618. |
APA | Wang, CL.,Wang, YG.,Ma, XY.,Liu, Y.,Sun, LQ.,...&Wang, QY.(2006).Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser.Chinese physics letters,23(3),616-618. |
MLA | Wang, CL,et al."Comparison between two kinds of semiconductor absorbers for mode-locking in nd : yvo4 laser".Chinese physics letters 23.3(2006):616-618. |
入库方式: iSwitch采集
来源:半导体研究所
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