Influence of the cavity on the low-temperature photoluminescence of sige/si multiquantum wells grown on a silicon-on-insulator substrate
文献类型：期刊论文
| 作者 | Li, CB; Cheng, BW; Zuo, YH; Morrison, AP; Yu, JZ; Wang, QM |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-03-20 |
| 卷号 | 88期号:12页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2187433 |
| 通讯作者 | Li, cb(cbli1104@yahoo.com.cn) |
| 英文摘要 | The influences of the cavity on the low-temperature photoluminescence of si0.59ge0.41/si multiquantum wells grown on silicon-on-insulator substrates are discussed. the positions of the modulated photoluminescence (pl) peaks not only relate to the nature of sige/si multiquantum wells, but also relate to the characteristic of the cavity. with increasing temperature, a redshift of the modulated pl peak originating from the thermo-optical effect of the cavity is observed. |
| WOS关键词 | SI-GE ALLOYS ; MULTILAYER STRUCTURE ; ROOM-TEMPERATURE ; QUANTUM-WELLS ; BAND-EDGE ; HETEROSTRUCTURES ; ISLANDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000236250100033 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426838 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, CB |
| 作者单位 | 1.Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, CB,Cheng, BW,Zuo, YH,et al. Influence of the cavity on the low-temperature photoluminescence of sige/si multiquantum wells grown on a silicon-on-insulator substrate[J]. Applied physics letters,2006,88(12):3. |
| APA | Li, CB,Cheng, BW,Zuo, YH,Morrison, AP,Yu, JZ,&Wang, QM.(2006).Influence of the cavity on the low-temperature photoluminescence of sige/si multiquantum wells grown on a silicon-on-insulator substrate.Applied physics letters,88(12),3. |
| MLA | Li, CB,et al."Influence of the cavity on the low-temperature photoluminescence of sige/si multiquantum wells grown on a silicon-on-insulator substrate".Applied physics letters 88.12(2006):3. |
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来源：半导体研究所
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