Structural and optical properties of violet ingan/alingan light-emitting diodes grown by mocvd
文献类型：期刊论文
| 作者 | Liu, J. P.; Shen, G. D.; Zhu, J. J.; Zhang, S. M.; Jiang, D. S.; Yang, H. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-09-15 |
| 卷号 | 295期号:1页码:7-11 |
| 关键词 | Metal organic chemical vapor deposition Violet light-emitting diodes Alingan quaternary alloy |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.07.017 |
| 通讯作者 | Liu, j. p.(jianpingliu76@hotmail.com) |
| 英文摘要 | High-performance violet light-emitting diodes (leds) with ingan/alingan multiple quantum well (mqw) active regions were grown by metal organic chemical vapor deposition (mocvd). the interface flatness of the ingan/alingan mqws and the emission efficiency of the led are firstly improved with increasing al content in the alingan barrier layer, and then degraded as al content increases further, being optimal when al content is 0.12. similarly, the result is optimized if the indium content is approximately 2.5% in the alingan barrier layer. the mechanisms which have influences on the radiative efficiency when the al content increases are discussed. a high output power of 7.3 mw for the violet led at 20 ma current has been achieved. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | QUATERNARY ALINGAN EPILAYERS ; EMISSION ; GAN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000241178100002 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426840 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, J. P. |
| 作者单位 | 1.Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Chaoyang Dist, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, J. P.,Shen, G. D.,Zhu, J. J.,et al. Structural and optical properties of violet ingan/alingan light-emitting diodes grown by mocvd[J]. Journal of crystal growth,2006,295(1):7-11. |
| APA | Liu, J. P.,Shen, G. D.,Zhu, J. J.,Zhang, S. M.,Jiang, D. S.,&Yang, H..(2006).Structural and optical properties of violet ingan/alingan light-emitting diodes grown by mocvd.Journal of crystal growth,295(1),7-11. |
| MLA | Liu, J. P.,et al."Structural and optical properties of violet ingan/alingan light-emitting diodes grown by mocvd".Journal of crystal growth 295.1(2006):7-11. |
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来源：半导体研究所
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