Time-resolved photoluminescence spectra of self-assembled inas/gaas quantum dots
文献类型：期刊论文
| 作者 | Kong, LM; Cai, JF; Wu, ZY; Gong, Z; Niu, ZC; Feng, ZC |
| 刊名 | Thin solid films
 |
| 出版日期 | 2006-03-01 |
| 卷号 | 498期号:1-2页码:188-192 |
| 关键词 | Time-resolved photoluminescence Inas self-assembled qds Migration of carriers |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2005.07.079 |
| 通讯作者 | Feng, zc() |
| 英文摘要 | Two types of inas self-assembled quantum dots (qds) were prepared by molecular beam epitaxy. atomic force microscopy (afm) measurements showed that, compared to qds grown on gaas substrate, qds grown on ingaas layer has a significantly enhanced density. the short spacing (several nanometer) among qds stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (pl) peak. we study systematically the dependence of pl lifetime on the qds size, density and temperature (1). we found that, below 50 k, the pl lifetime is insensitive to temperature, which is interpreted from the localization effects. as t increases, the pl lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. the increase of carriers in qds migrated from barriers and wetting layer (wl), and the redistribution of carriers among qds enhance the pl lifetime as t increases. the thermal emission and non-radiative recombination have effects to reduce the pl lifetime at higher t. as a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in qds, and qds with different densities have different pl lifetime dependence on the qds size. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | 1.3 MU-M ; DEPENDENT RADIATIVE DECAY ; THERMAL REDISTRIBUTION ; EXCITONS ; RECOMBINATION ; RELAXATION ; LIFETIMES ; EMISSION ; EPITAXY ; LASERS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000235270500037 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426850 |
| 专题 | 半导体研究所 |
| 通讯作者 | Feng, ZC |
| 作者单位 | 1.Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan 2.Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan 3.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 4.Chinese Acad Sci, Inst Semicond, Natl Lab Supperlattice & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Kong, LM,Cai, JF,Wu, ZY,et al. Time-resolved photoluminescence spectra of self-assembled inas/gaas quantum dots[J]. Thin solid films,2006,498(1-2):188-192. |
| APA | Kong, LM,Cai, JF,Wu, ZY,Gong, Z,Niu, ZC,&Feng, ZC.(2006).Time-resolved photoluminescence spectra of self-assembled inas/gaas quantum dots.Thin solid films,498(1-2),188-192. |
| MLA | Kong, LM,et al."Time-resolved photoluminescence spectra of self-assembled inas/gaas quantum dots".Thin solid films 498.1-2(2006):188-192. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。