Synthesis of gan films on porous silicon substrates
文献类型：期刊论文
| 作者 | Dong, ZH; Xue, CS; Zhuang, HZ; Gao, HY; Tian, DH; Wu, YX |
| 刊名 | Rare metals
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 25期号:1页码:96-98 |
| 关键词 | Semiconductor technology Gan films Magnetron sputtering Porous silicon |
| ISSN号 | 1001-0521 |
| 通讯作者 | Xue, cs() |
| 英文摘要 | A novel and simple method was employed to synthesize gan films on porous silicon (ps) substrates. gan films were obtained through the reaction between nh3 and ga2o3 films deposited on the substrates with magnetron sputtering. since gan and ps are all good materials for luminescence, it is expected to obtain some new properties from gan on ps. the samples were analyzed with x-ray diffraction (xrd) to identify crystalline structure. fourier transmit infrared (ftir) spectrum was used to analyze the chemical state of the samples. the films were observed with scanning electron microscopy (sem) and were found to consist of many big crystal grains. photoluminescence (pl) spectrum was used to illuminate the optical property of the gan films. |
| WOS关键词 | BUFFER LAYER ; GROWTH ; NITRIDE |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000235822300019 |
| 出版者 | NONFERROUS METALS SOCIETY CHINA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426851 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, CS |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dong, ZH,Xue, CS,Zhuang, HZ,et al. Synthesis of gan films on porous silicon substrates[J]. Rare metals,2006,25(1):96-98. |
| APA | Dong, ZH,Xue, CS,Zhuang, HZ,Gao, HY,Tian, DH,&Wu, YX.(2006).Synthesis of gan films on porous silicon substrates.Rare metals,25(1),96-98. |
| MLA | Dong, ZH,et al."Synthesis of gan films on porous silicon substrates".Rare metals 25.1(2006):96-98. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。