Electronic structures of gaas/alxga1-xas quantum double
文献类型:期刊论文
作者 | Li, Shu-Shen; Xia, Jian-Bai |
刊名 | Nanoscale research letters
![]() |
出版日期 | 2006-12-01 |
卷号 | 1期号:2页码:167-171 |
关键词 | Electronic structures Gaas Quantum double rings Nanostructures Effective-mass theory Band mixing |
ISSN号 | 1931-7573 |
通讯作者 | Li, shu-shen(sslee@red.semi.ac.cn) |
英文摘要 | In the framework of effective mass envelope function theory, the electronic structures of gaas/alxga1-xas quantum double rings(qdrs) are studied. our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. in calculations, the effects due to the different effective masses of electrons and holes in gaas and alxga1-xas and the valence band mixing are considered. the energy levels of electrons and holes are calculated for different shapes of qdrs. the calculated results are useful in designing and fabricating the interrelated photoelectric devices. the single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in qdrs. |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000202975900007 |
出版者 | SPRINGER |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426855 |
专题 | 半导体研究所 |
通讯作者 | Li, Shu-Shen |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Shu-Shen,Xia, Jian-Bai. Electronic structures of gaas/alxga1-xas quantum double[J]. Nanoscale research letters,2006,1(2):167-171. |
APA | Li, Shu-Shen,&Xia, Jian-Bai.(2006).Electronic structures of gaas/alxga1-xas quantum double.Nanoscale research letters,1(2),167-171. |
MLA | Li, Shu-Shen,et al."Electronic structures of gaas/alxga1-xas quantum double".Nanoscale research letters 1.2(2006):167-171. |
入库方式: iSwitch采集
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。