中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structures of gaas/alxga1-xas quantum double

文献类型:期刊论文

作者Li, Shu-Shen; Xia, Jian-Bai
刊名Nanoscale research letters
出版日期2006-12-01
卷号1期号:2页码:167-171
关键词Electronic structures Gaas Quantum double rings Nanostructures Effective-mass theory Band mixing
ISSN号1931-7573
通讯作者Li, shu-shen(sslee@red.semi.ac.cn)
英文摘要In the framework of effective mass envelope function theory, the electronic structures of gaas/alxga1-xas quantum double rings(qdrs) are studied. our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. in calculations, the effects due to the different effective masses of electrons and holes in gaas and alxga1-xas and the valence band mixing are considered. the energy levels of electrons and holes are calculated for different shapes of qdrs. the calculated results are useful in designing and fabricating the interrelated photoelectric devices. the single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in qdrs.
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000202975900007
出版者SPRINGER
URI标识http://www.irgrid.ac.cn/handle/1471x/2426855
专题半导体研究所
通讯作者Li, Shu-Shen
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
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Li, Shu-Shen,Xia, Jian-Bai. Electronic structures of gaas/alxga1-xas quantum double[J]. Nanoscale research letters,2006,1(2):167-171.
APA Li, Shu-Shen,&Xia, Jian-Bai.(2006).Electronic structures of gaas/alxga1-xas quantum double.Nanoscale research letters,1(2),167-171.
MLA Li, Shu-Shen,et al."Electronic structures of gaas/alxga1-xas quantum double".Nanoscale research letters 1.2(2006):167-171.

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来源:半导体研究所

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