中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Passively q-switched and mode-locked diode-pumped nd : yvo4 laser with lt-gaas output coupler

文献类型:期刊论文

作者Liu, J; Wang, YG; Yang, JM; He, JL; Ma, XY
刊名Optics communications
出版日期2006-05-15
卷号261期号:2页码:332-335
关键词Lt-gaas Nd : yvo4 Qml
ISSN号0030-4018
DOI10.1016/j.optcom.2005.12.024
通讯作者Liu, j(jieliu@sdnu.edu.cn)
英文摘要We have demonstrated an efficient and compact passively q-switched and mode-locked (qml) 1064 nm nd:yvo4 laser by using a low temperature grown gaas (lt-gaas) saturable absorber as well as an output coupler. stable qml with envelope duration as short as 10 ns and q-switched repetition rate of 36 khz was obtained. it is the shortest envelope duration as far as we know, and it is so short that it can be used as q-switching pulses directly. at 6.9 w of the incident pump power, average output power of 1.24 w was achieved and the corresponding peak power and energy of a single q-switched pulse were 3.44 kw and 34.4 mu j, respectively. the mode-locked pulses inside the q-switched pulse envelope had a repetition rate of 780 mhz. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词CUT ND-GDVO4 LASER ; SATURABLE ABSORBER ; LOCKING ; CR4+-YAG ; YAG
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000237403500021
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426864
专题半导体研究所
通讯作者Liu, J
作者单位1.Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China
推荐引用方式
GB/T 7714
Liu, J,Wang, YG,Yang, JM,et al. Passively q-switched and mode-locked diode-pumped nd : yvo4 laser with lt-gaas output coupler[J]. Optics communications,2006,261(2):332-335.
APA Liu, J,Wang, YG,Yang, JM,He, JL,&Ma, XY.(2006).Passively q-switched and mode-locked diode-pumped nd : yvo4 laser with lt-gaas output coupler.Optics communications,261(2),332-335.
MLA Liu, J,et al."Passively q-switched and mode-locked diode-pumped nd : yvo4 laser with lt-gaas output coupler".Optics communications 261.2(2006):332-335.

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来源:半导体研究所

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