Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy
文献类型:期刊论文
作者 | Zhao Lei; Chen Yong-hai; Zuo Yu-hua; Wang Hai-ning; Shi Wen-hua |
刊名 | Spectroscopy and spectral analysis
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出版日期 | 2006-07-01 |
卷号 | 26期号:7页码:1185-1189 |
关键词 | Reflectance difference spectroscopy Semiconductor In-plane optical anisotropy Electrooptic modification |
ISSN号 | 1000-0593 |
通讯作者 | Zhao lei() |
英文摘要 | In the present review, the measuring principle of reflectance difference spectroscopy (rds) is given. as a powerful tool in the surface and interface analysis technologies, the application of rds to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. and it is believed that rds will play an important role in the electrooptic modification of si-based semiconductor materials. |
WOS关键词 | SURFACE ; INTERFACE ; GROWTH |
WOS研究方向 | Spectroscopy |
WOS类目 | Spectroscopy |
语种 | 英语 |
WOS记录号 | WOS:000239717100001 |
出版者 | BEIJING UNIV PRESS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426865 |
专题 | 半导体研究所 |
通讯作者 | Zhao Lei |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Elect, State Key Lab Sensing Tech, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Zhao Lei,Chen Yong-hai,Zuo Yu-hua,et al. Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy[J]. Spectroscopy and spectral analysis,2006,26(7):1185-1189. |
APA | Zhao Lei,Chen Yong-hai,Zuo Yu-hua,Wang Hai-ning,&Shi Wen-hua.(2006).Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy.Spectroscopy and spectral analysis,26(7),1185-1189. |
MLA | Zhao Lei,et al."Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy".Spectroscopy and spectral analysis 26.7(2006):1185-1189. |
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来源:半导体研究所
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