Structure and visible luminescence of zno nanoparticles
文献类型：期刊论文
| 作者 | Peng, W. Q.; Qu, S. C.; Cong, G. W.; Wang, Z. G. |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:156-159 |
| ISSN号 | 1369-8001 |
| 关键词 | Nanoparticles Semiconducting materials Photoluminescence |
| DOI | 10.1016/j.mssp.2006.01.038 |
| 通讯作者 | Peng, w. q.(wqpeng@semi.ac.cn) |
| 英文摘要 | Zno nanoparticles were synthesized in ethanolic solution using a sol-gel method. the structural and optical properties were investigated by x-ray diffraction, transmission electron microscopy, uv absorption, and photoluminescence. after annealing at 200 degrees c, the particle size is increased and the peak of defect luminescence in the visible region is changed. a yellow emission was observed in the as-prepared sample and a green emission in the annealed sample. the change of the visible emission is related to oxygen defects. annealing in the absence of oxygen would increase oxygen vacancies. (c) 2006 elsevier ltd. all rights reserved. |
| WOS关键词 | PHOTOLUMINESCENCE ; NANOCRYSTALS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCI LTD |
| WOS记录号 | WOS:000238805900034 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426868 |
| 专题 | 半导体研究所 |
| 通讯作者 | Peng, W. Q. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, W. Q.,Qu, S. C.,Cong, G. W.,et al. Structure and visible luminescence of zno nanoparticles[J]. Materials science in semiconductor processing,2006,9(1-3):156-159. |
| APA | Peng, W. Q.,Qu, S. C.,Cong, G. W.,&Wang, Z. G..(2006).Structure and visible luminescence of zno nanoparticles.Materials science in semiconductor processing,9(1-3),156-159. |
| MLA | Peng, W. Q.,et al."Structure and visible luminescence of zno nanoparticles".Materials science in semiconductor processing 9.1-3(2006):156-159. |
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来源：半导体研究所
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