Fabrication and photoluminescence of gan nanowires prepared by ammoniating ga2o3/bn films on si substrate
文献类型：期刊论文
| 作者 | Xue, Chengshan; Wu, Yuxin; Zhuang, Huizhao; Tian, Deheng; Liu, Yi'an; He, Jianting; Ai, Yujie; Sun, Lili; Wang, Fuxue |
| 刊名 | Chinese science bulletin
 |
| 出版日期 | 2006-07-01 |
| 卷号 | 51期号:14页码:1662-1665 |
| 关键词 | Magnetron sputtering Gan nanowires Photoluminescence |
| ISSN号 | 1001-6538 |
| DOI | 10.1007/s11434-006-2042-z |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Gan nanowires were successfully prepared on si(111) substrate through ammoniating ga2o3/bn films deposited by radio frequency magnetron sputtering system. the synthesized nanowires were confirmed as hexagonal wurtzite gan by x-ray diffraction, selected-area electron diffraction and fourier transform infrared spectra. scanning electron microscopy and transmission electron microscopy revealed that the grown gan nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. the representative photoluminescence spectrum at room temperature exhibited a strong uv light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. the growth mechanism is discussed briefly. |
| WOS关键词 | GALLIUM NITRIDE NANOWIRES ; INFRARED-ABSORPTION ; GROWTH ; CARBON |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000240391900002 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426876 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Chengshan,Wu, Yuxin,Zhuang, Huizhao,et al. Fabrication and photoluminescence of gan nanowires prepared by ammoniating ga2o3/bn films on si substrate[J]. Chinese science bulletin,2006,51(14):1662-1665. |
| APA | Xue, Chengshan.,Wu, Yuxin.,Zhuang, Huizhao.,Tian, Deheng.,Liu, Yi'an.,...&Wang, Fuxue.(2006).Fabrication and photoluminescence of gan nanowires prepared by ammoniating ga2o3/bn films on si substrate.Chinese science bulletin,51(14),1662-1665. |
| MLA | Xue, Chengshan,et al."Fabrication and photoluminescence of gan nanowires prepared by ammoniating ga2o3/bn films on si substrate".Chinese science bulletin 51.14(2006):1662-1665. |
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来源：半导体研究所
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