Selective growth of absorptive ingaasp layer on inp corrugation for a buried grating structure
文献类型：期刊论文
| 作者 | Feng, W.; Pan, J. Q.; Cheng, Y. B.; Liao, Z. Y.; Wang, B. J.; Zhou, F.; Zhao, L. J.; Zhu, H. L.; Wang, W. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:1页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2429908 |
| 通讯作者 | Feng, w.(wfeng@semi.ac.cn) |
| 英文摘要 | A buried grating structure with a selectively grown absorptive ingaasp layer was fabricated and characterized by scanning electron microscopy and photoluminescence. the inp corrugation was etched by introducing a sio2 mask that was more stable than a conventional photoresist mask during the etching process. moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the sio2 mask. though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of ingaalas multiple quantum well, which was grown on the buried grating structure. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; DFB LASERS ; MOVPE ; FABRICATION ; SUBSTRATE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000243379900017 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426881 |
| 专题 | 半导体研究所 |
| 通讯作者 | Feng, W. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, W.,Pan, J. Q.,Cheng, Y. B.,et al. Selective growth of absorptive ingaasp layer on inp corrugation for a buried grating structure[J]. Applied physics letters,2007,90(1):3. |
| APA | Feng, W..,Pan, J. Q..,Cheng, Y. B..,Liao, Z. Y..,Wang, B. J..,...&Wang, W..(2007).Selective growth of absorptive ingaasp layer on inp corrugation for a buried grating structure.Applied physics letters,90(1),3. |
| MLA | Feng, W.,et al."Selective growth of absorptive ingaasp layer on inp corrugation for a buried grating structure".Applied physics letters 90.1(2007):3. |
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来源：半导体研究所
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