The influence of internal electric fields on the transition energy of ingan/gan quantum well
文献类型：期刊论文
| 作者 | Guo, Lunchun; Wang, Xiaoliang; Xiao, Hongling; Wang, Baozhu |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298页码:522-526 |
| 关键词 | Computer simulation Quantum well Nitrides Light-emitting diodes |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.11.078 |
| 通讯作者 | Wang, xiaoliang(xlwang@red.semi.ac.cn) |
| 英文摘要 | We present a new way to meet the amount of strain relaxation in an ingan quantum well layer grown on relaxed gan by calculating and measuring its internal field. with perturbation theory, we also calculate the transition energy of ingan/gan sqws as affected by internal fields. the newly reported experimental data by graham et al. fit our calculations well on the assumption that the ingan well layer suffered a 20% strain relaxation, we discuss the differences between our calculated results and the experimental data. our calculation suggests that with the increase of indium mole fraction in the ingan/gan quantum well, the effect of polarization fields on the luminescence of the quantum well will increase. moreover, our calculation also suggests that an increase in the quantum well width by only one monolayer can result in a large reduction in the transition energy. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | POLARIZATION ; INN ; GAN ; HETEROSTRUCTURES |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244622600123 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426888 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Xiaoliang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Lunchun,Wang, Xiaoliang,Xiao, Hongling,et al. The influence of internal electric fields on the transition energy of ingan/gan quantum well[J]. Journal of crystal growth,2007,298:522-526. |
| APA | Guo, Lunchun,Wang, Xiaoliang,Xiao, Hongling,&Wang, Baozhu.(2007).The influence of internal electric fields on the transition energy of ingan/gan quantum well.Journal of crystal growth,298,522-526. |
| MLA | Guo, Lunchun,et al."The influence of internal electric fields on the transition energy of ingan/gan quantum well".Journal of crystal growth 298(2007):522-526. |
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来源：半导体研究所
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