Influence of deep level defects on electrical compensation in semi-insulating inp materials
文献类型：期刊论文
| 作者 | Yang Jun; Zhao You-Wen; Dong Zhi-Yuan; Deng Ai-Hong; Miao Shan-Shan; Wang Bo |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-02-01 |
| 卷号 | 56期号:2页码:1167-1171 |
| 关键词 | Inp Semi-insulating Deep level Electric compensation |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhao you-wen(zhaoyw@red.semi.ac.cn) |
| 英文摘要 | In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( si) materials prepared by fe-doping and high temperature annealing of undoped inp. influence of deep level defects in the si-inp materials on the electrical compensation has been studied thermally stimulated current spectroscopy (tsc). electrical property of the fe-doped si-inp is deteriorated due to involvement of a high concentration of deep level defects in the compensation. in contrast, the concentration of deep defects is very low in high temperature annealed undoped si-inp in which fe acceptors formed by diffusion act as the only compensation centre to pin the fermi level, resulting in excellent electrical performance. a more comprehensive electrical compensation model of si-inp has been given based on the research results. |
| WOS关键词 | TRANSIENT SPECTROSCOPY ; ANNEALING AMBIENT ; UNDOPED INP ; FE ; GAAS ; CD1-XZNXTE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000243986600091 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426889 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao You-Wen |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Sichuan Univ, Dept Appl Phys, Chengdu 610065, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang Jun,Zhao You-Wen,Dong Zhi-Yuan,et al. Influence of deep level defects on electrical compensation in semi-insulating inp materials[J]. Acta physica sinica,2007,56(2):1167-1171. |
| APA | Yang Jun,Zhao You-Wen,Dong Zhi-Yuan,Deng Ai-Hong,Miao Shan-Shan,&Wang Bo.(2007).Influence of deep level defects on electrical compensation in semi-insulating inp materials.Acta physica sinica,56(2),1167-1171. |
| MLA | Yang Jun,et al."Influence of deep level defects on electrical compensation in semi-insulating inp materials".Acta physica sinica 56.2(2007):1167-1171. |
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来源：半导体研究所
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