Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer
文献类型：期刊论文
| 作者 | Wei, T. B.; Duan, R. F.; Wang, J. X.; Li, J. M.; Huo, Z. Q.; Ma, P.; Liu, Zh.; Zeng, Y. P. |
| 刊名 | Applied surface science
 |
| 出版日期 | 2007-07-15 |
| 卷号 | 253期号:18页码:7423-7428 |
| 关键词 | Gan Hvpe Cathodoluminescence Micro-raman scattering |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2007.03.030 |
| 通讯作者 | Wei, t. b.(tbwei@semi.ac.cn) |
| 英文摘要 | Large-scale gan free-standing substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. the bottom surface n-face and top surface ga-face showed great difference in anti-etching and optical properties. the variation of optical and structure characteristics were also microscopically identified using spatially resolved cathodoluminescence and micro-raman spectroscopy in cross-section of the gan substrate. three different regions were separated according to luminescent intensity along the film growth orientation. some tapered inversion domains with high free carrier concentration of 5 x 10(19) cm(-3) protruded up to the surface forming the hexagonal pits. the dark region of upper layer showed good crystalline quality with narrow donor bound exciton peak and low free carrier concentration. unlike the exponential dependence of the strain distribution, the free-standing gan substrate revealed a gradual increase of the strain mainly within the near n-polar side region with a thickness of about 50 mu m, then almost kept constant to the top surface. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | FREE-CARRIER CONCENTRATION ; INVERSION DOMAIN ; OVERGROWN GAN ; FILMS ; CATHODOLUMINESCENCE ; NONUNIFORMITIES ; BOUNDARIES ; SAPPHIRE ; POLARITY ; WAFERS |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000247863800013 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426906 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, T. B. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, T. B.,Duan, R. F.,Wang, J. X.,et al. Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer[J]. Applied surface science,2007,253(18):7423-7428. |
| APA | Wei, T. B..,Duan, R. F..,Wang, J. X..,Li, J. M..,Huo, Z. Q..,...&Zeng, Y. P..(2007).Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer.Applied surface science,253(18),7423-7428. |
| MLA | Wei, T. B.,et al."Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer".Applied surface science 253.18(2007):7423-7428. |
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来源：半导体研究所
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