中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer

文献类型:期刊论文

作者Zhang, Yang; Liu, Jian; Li, Yan; Yang, Fuhua
刊名Materials science in semiconductor processing
出版日期2007-08-01
卷号10期号:4-5页码:194-199
关键词Nanoscale metallic air-bridge Sacrificial layer Electron-beam lithography
ISSN号1369-8001
DOI10.1016/j.mssp.2007.11.004
通讯作者Zhang, yang(zhangyang@semi.ac.cn)
英文摘要A new method to fabricate nanoscale metallic air-bridges has been investigated. the pillar patterns of the air-bridge were defined on a sio2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a pmma/pmma-maa resist system. the fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (hf) solution. air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. the narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. the advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (c) 2007 elsevier ltd. all rights reserved.
WOS关键词QUANTUM-DOT ; CONTACTS ; SILICON
WOS研究方向Engineering ; Materials Science ; Physics
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000255256000010
出版者ELSEVIER SCI LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2426911
专题半导体研究所
通讯作者Zhang, Yang
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Yang,Liu, Jian,Li, Yan,et al. Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer[J]. Materials science in semiconductor processing,2007,10(4-5):194-199.
APA Zhang, Yang,Liu, Jian,Li, Yan,&Yang, Fuhua.(2007).Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer.Materials science in semiconductor processing,10(4-5),194-199.
MLA Zhang, Yang,et al."Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer".Materials science in semiconductor processing 10.4-5(2007):194-199.

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来源:半导体研究所

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