Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer
文献类型:期刊论文
作者 | Zhang, Yang; Liu, Jian; Li, Yan; Yang, Fuhua |
刊名 | Materials science in semiconductor processing
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出版日期 | 2007-08-01 |
卷号 | 10期号:4-5页码:194-199 |
关键词 | Nanoscale metallic air-bridge Sacrificial layer Electron-beam lithography |
ISSN号 | 1369-8001 |
DOI | 10.1016/j.mssp.2007.11.004 |
通讯作者 | Zhang, yang(zhangyang@semi.ac.cn) |
英文摘要 | A new method to fabricate nanoscale metallic air-bridges has been investigated. the pillar patterns of the air-bridge were defined on a sio2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a pmma/pmma-maa resist system. the fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (hf) solution. air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. the narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. the advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (c) 2007 elsevier ltd. all rights reserved. |
WOS关键词 | QUANTUM-DOT ; CONTACTS ; SILICON |
WOS研究方向 | Engineering ; Materials Science ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000255256000010 |
出版者 | ELSEVIER SCI LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426911 |
专题 | 半导体研究所 |
通讯作者 | Zhang, Yang |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Yang,Liu, Jian,Li, Yan,et al. Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer[J]. Materials science in semiconductor processing,2007,10(4-5):194-199. |
APA | Zhang, Yang,Liu, Jian,Li, Yan,&Yang, Fuhua.(2007).Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer.Materials science in semiconductor processing,10(4-5),194-199. |
MLA | Zhang, Yang,et al."Fabrication of nanoscale metallic air-bridges by introducing a sio2 sacrificial layer".Materials science in semiconductor processing 10.4-5(2007):194-199. |
入库方式: iSwitch采集
来源:半导体研究所
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