Anomalous photoluminescence of inas quantum dots implanted by mn ions
文献类型：期刊论文
| 作者 | Hu, L. J.; Chen, Y. H.; Ye, X. L.; Huang, X. Q.; Liang, L. Y.; Ding, F.; Wang, Z. G. |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2007-02-01 |
| 卷号 | 36期号:2页码:221-225 |
| 关键词 | Photoluminescence Mn Inas quantum dot |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2006.11.002 |
| 通讯作者 | Hu, l. j.(liangjun_hu@yahoo.com.cn) |
| 英文摘要 | The photoluminescence (pl) of mn-implanted quantum dot (qd) samples after rapid annealing is studied. it is found that the blue shift of the pl peak of the qds, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. this anomaly is probably related to the migration of mn atoms to the inas qds during annealing, which leads to strain relaxation when mn atoms enter inas qds or to the suppression of the inter-diffusion of in and ga atoms when mn atoms surround qds. both effects will suppress the blue shift of the qd pl peaks. the temperature dependence of the pl intensity of the heavily implanted qds confirms the existence of defect traps around the qds. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | DILUTED MAGNETIC SEMICONDUCTOR ; GAAS ; INTERDIFFUSION ; (GA,MN)AS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000244613200015 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426917 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hu, L. J. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, L. J.,Chen, Y. H.,Ye, X. L.,et al. Anomalous photoluminescence of inas quantum dots implanted by mn ions[J]. Physica e-low-dimensional systems & nanostructures,2007,36(2):221-225. |
| APA | Hu, L. J..,Chen, Y. H..,Ye, X. L..,Huang, X. Q..,Liang, L. Y..,...&Wang, Z. G..(2007).Anomalous photoluminescence of inas quantum dots implanted by mn ions.Physica e-low-dimensional systems & nanostructures,36(2),221-225. |
| MLA | Hu, L. J.,et al."Anomalous photoluminescence of inas quantum dots implanted by mn ions".Physica e-low-dimensional systems & nanostructures 36.2(2007):221-225. |
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来源：半导体研究所
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