Synthesis of gan nanowires through ga2o3 films' reaction with ammonia
文献类型:期刊论文
作者 | Ai, Yujie; Xue, Chengshan; Sun, Chuanwei; Sun, Lili; Zhuang, Huizhao; Wang, Fuxue; Li, Hong; Chen, Jinhua |
刊名 | Materials letters
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出版日期 | 2007-05-01 |
卷号 | 61期号:13页码:2833-2836 |
关键词 | Crystal growth Epitaxial growth Gan Nanowires Ti |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2006.11.038 |
通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
英文摘要 | Gan nanowires were synthesized by ammoniating ga2o3 films on ti layers deposited on si (111) substrates at 950 degrees c. the products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), fourier transformed infrared spectroscopy (ftir) and high-resolution transmission electron microscopy (hrtem). the xrd, ftir and hrtem studies showed that these nanowires were hexagonal gan single crystals. sem observation demonstrated that these gan nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate. (c) 2006 elsevier b.v. all rights reserved. |
WOS关键词 | THIN-FILMS ; GROWTH ; NANORODS ; POWDERS ; SI(111) ; ARRAYS ; CARBON ; LAYER |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000246407800055 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426922 |
专题 | 半导体研究所 |
通讯作者 | Xue, Chengshan |
作者单位 | 1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Jinan Univ, Sch Informat Sci & Engn, Jinan 250022, Peoples R China |
推荐引用方式 GB/T 7714 | Ai, Yujie,Xue, Chengshan,Sun, Chuanwei,et al. Synthesis of gan nanowires through ga2o3 films' reaction with ammonia[J]. Materials letters,2007,61(13):2833-2836. |
APA | Ai, Yujie.,Xue, Chengshan.,Sun, Chuanwei.,Sun, Lili.,Zhuang, Huizhao.,...&Chen, Jinhua.(2007).Synthesis of gan nanowires through ga2o3 films' reaction with ammonia.Materials letters,61(13),2833-2836. |
MLA | Ai, Yujie,et al."Synthesis of gan nanowires through ga2o3 films' reaction with ammonia".Materials letters 61.13(2007):2833-2836. |
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来源:半导体研究所
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