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Chinese Academy of Sciences Institutional Repositories Grid
Synthesis of gan nanowires through ga2o3 films' reaction with ammonia

文献类型:期刊论文

作者Ai, Yujie; Xue, Chengshan; Sun, Chuanwei; Sun, Lili; Zhuang, Huizhao; Wang, Fuxue; Li, Hong; Chen, Jinhua
刊名Materials letters
出版日期2007-05-01
卷号61期号:13页码:2833-2836
关键词Crystal growth Epitaxial growth Gan Nanowires Ti
ISSN号0167-577X
DOI10.1016/j.matlet.2006.11.038
通讯作者Xue, chengshan(xuechengshan@sdnu.edu.cn)
英文摘要Gan nanowires were synthesized by ammoniating ga2o3 films on ti layers deposited on si (111) substrates at 950 degrees c. the products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), fourier transformed infrared spectroscopy (ftir) and high-resolution transmission electron microscopy (hrtem). the xrd, ftir and hrtem studies showed that these nanowires were hexagonal gan single crystals. sem observation demonstrated that these gan nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词THIN-FILMS ; GROWTH ; NANORODS ; POWDERS ; SI(111) ; ARRAYS ; CARBON ; LAYER
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000246407800055
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426922
专题半导体研究所
通讯作者Xue, Chengshan
作者单位1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
2.Jinan Univ, Sch Informat Sci & Engn, Jinan 250022, Peoples R China
推荐引用方式
GB/T 7714
Ai, Yujie,Xue, Chengshan,Sun, Chuanwei,et al. Synthesis of gan nanowires through ga2o3 films' reaction with ammonia[J]. Materials letters,2007,61(13):2833-2836.
APA Ai, Yujie.,Xue, Chengshan.,Sun, Chuanwei.,Sun, Lili.,Zhuang, Huizhao.,...&Chen, Jinhua.(2007).Synthesis of gan nanowires through ga2o3 films' reaction with ammonia.Materials letters,61(13),2833-2836.
MLA Ai, Yujie,et al."Synthesis of gan nanowires through ga2o3 films' reaction with ammonia".Materials letters 61.13(2007):2833-2836.

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来源:半导体研究所

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