Broad-band semiconductor optical amplifiers
文献类型：期刊论文
| 作者 | Ding, Ying; Kan, Qiang; Wang, Jun-ling; Pan, Jiao-qing; Zhou, Fan; Chen, Wei-xi; Wang, Wei |
| 刊名 | Journal of luminescence
 |
| 出版日期 | 2007 |
| 卷号 | 122页码:208-211 |
| 关键词 | Semiconductor optical amplifiers (soas) Bandwidth Saturation output power |
| ISSN号 | 0022-2313 |
| DOI | 10.1016/j.jlumin.2006.01.094 |
| 通讯作者 | Ding, ying(yingding@red.semi.ac.cn) |
| 英文摘要 | Broad-band semiconductor optical amplifiers (soas) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. amplified spontaneous emission (ase) spectra and gain spectra of soas were measured and analyzed at different cw biases. a maximal 3 db ase bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 db optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active soa. other soas characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | OUTPUT-POWER ; CROSSTALK ; SATURATION ; DISTORTION |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000242991900063 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426928 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, Ying |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China 3.Peking Univ, Sch Phys, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ding, Ying,Kan, Qiang,Wang, Jun-ling,et al. Broad-band semiconductor optical amplifiers[J]. Journal of luminescence,2007,122:208-211. |
| APA | Ding, Ying.,Kan, Qiang.,Wang, Jun-ling.,Pan, Jiao-qing.,Zhou, Fan.,...&Wang, Wei.(2007).Broad-band semiconductor optical amplifiers.Journal of luminescence,122,208-211. |
| MLA | Ding, Ying,et al."Broad-band semiconductor optical amplifiers".Journal of luminescence 122(2007):208-211. |
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来源：半导体研究所
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