Al compositional inhomogeneity of algan epilayer with a high al composition grown by metal-organic chemical vapour deposition
文献类型：期刊论文
| 作者 | Wang, X. L.; Zhao, D. G.; Jiang, D. S.; Yang, H.; Liang, J. W.; Jahn, U.; Ploog, K. |
| 刊名 | Journal of physics-condensed matter
 |
| 出版日期 | 2007-05-02 |
| 卷号 | 19期号:17页码:6 |
| ISSN号 | 0953-8984 |
| DOI | 10.1088/0953-8984/19/17/176005 |
| 通讯作者 | Wang, x. l.(wxl@mail.semi.ac.cn) |
| 英文摘要 | The a1 compositional distribution of a1gan is investigated by cathodoluminescence (cl). monochromatic cl images and cl spectra reveal a lateral a1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. cross-sectional cl images show a relatively uniform al compositional distribution in the growth direction, indicating columnar growth mode of a1gan films. in addition, a thin a1gan layer with lower al composition is grown on top of the buffer a1n layer near the bottom of the a1gan epilayer because of the larger lateral mobility of ga adatoms on the growth surface and their accumulation at the grain boundaries. |
| WOS关键词 | SAPPHIRE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000246556400008 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426933 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, X. L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Paul Drude Inst Festkorperelecktron, D-10117 Berlin, Germany |
| 推荐引用方式 GB/T 7714 | Wang, X. L.,Zhao, D. G.,Jiang, D. S.,et al. Al compositional inhomogeneity of algan epilayer with a high al composition grown by metal-organic chemical vapour deposition[J]. Journal of physics-condensed matter,2007,19(17):6. |
| APA | Wang, X. L..,Zhao, D. G..,Jiang, D. S..,Yang, H..,Liang, J. W..,...&Ploog, K..(2007).Al compositional inhomogeneity of algan epilayer with a high al composition grown by metal-organic chemical vapour deposition.Journal of physics-condensed matter,19(17),6. |
| MLA | Wang, X. L.,et al."Al compositional inhomogeneity of algan epilayer with a high al composition grown by metal-organic chemical vapour deposition".Journal of physics-condensed matter 19.17(2007):6. |
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来源：半导体研究所
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