Effect of growth conditions on the gan thin film by sputtering deposition
文献类型：期刊论文
| 作者 | Zhang, C. G.; Bian, L. F.; Chen, W. D.; Hsu, C. C. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007-02-15 |
| 卷号 | 299期号:2页码:268-271 |
| 关键词 | Phase equilibria Radio-frequency magnetron sputtering Sputtering Gallium compounds Gallium nitride Semiconducting gallium compounds Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.12.009 |
| 通讯作者 | Zhang, c. g.(zhangcg@semi.ac.cn) |
| 英文摘要 | The phase transition between thermodynamically stable hexagonal wurtzite (h-wz) gallium nitride (gan) and metastable cubic zinc-blende (c-zb) gan during growth by radio-frequency planar magnetron sputtering is studied. gan films grown on substrates with lower mismatches tend to have a h-wz structure, but when grown on substrates with higher mismatches, a c-zb structure is preferred. gan films grown under high nitrogen pressure also tend to have a h-wz structure, whereas a c-zb structure is preferred when grown under low nitrogen pressure. in addition, low target-power growth not only helps to improve hexagonal gan (h-gan) crystalline quality at high nitrogen pressure on low-mismatch substrates, but also enhances cubic gan (c-gan) quality at low nitrogen pressure on high-mismatch substrates. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; CUBIC GAN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244833100006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426934 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, C. G. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Surf Phys, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, C. G.,Bian, L. F.,Chen, W. D.,et al. Effect of growth conditions on the gan thin film by sputtering deposition[J]. Journal of crystal growth,2007,299(2):268-271. |
| APA | Zhang, C. G.,Bian, L. F.,Chen, W. D.,&Hsu, C. C..(2007).Effect of growth conditions on the gan thin film by sputtering deposition.Journal of crystal growth,299(2),268-271. |
| MLA | Zhang, C. G.,et al."Effect of growth conditions on the gan thin film by sputtering deposition".Journal of crystal growth 299.2(2007):268-271. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。