Photoluminescence degradation in gan induced by light enhanced surface oxidation
文献类型：期刊论文
| 作者 | Liu, Wenbao; Sun, Xian; Zhang, Shuang; Chen, Jun; Wang, Hui; Wang, Xiaolan; Zhao, Degang; Yang, Hui |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2007-10-01 |
| 卷号 | 102期号:7页码:3 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2786617 |
| 通讯作者 | Liu, wenbao(wbliu@semi.ac.cn) |
| 英文摘要 | The exponential degradation of the photoluminescence (pl) intensity at the near-band-gap was observed in heavily doped or low-quality gan with pristine surface under continuous helium-cadmium laser excitation. in doped gan samples, the degradation speed increased with doping concentration. the oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. the oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of ga 3d binding energy. the reason for pl degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination. |
| WOS关键词 | GAAS ; SPECTROSCOPY ; MODEL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000250147700181 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426939 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, Wenbao |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Wenbao,Sun, Xian,Zhang, Shuang,et al. Photoluminescence degradation in gan induced by light enhanced surface oxidation[J]. Journal of applied physics,2007,102(7):3. |
| APA | Liu, Wenbao.,Sun, Xian.,Zhang, Shuang.,Chen, Jun.,Wang, Hui.,...&Yang, Hui.(2007).Photoluminescence degradation in gan induced by light enhanced surface oxidation.Journal of applied physics,102(7),3. |
| MLA | Liu, Wenbao,et al."Photoluminescence degradation in gan induced by light enhanced surface oxidation".Journal of applied physics 102.7(2007):3. |
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来源：半导体研究所
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