Two opposite gradients of hole density in as-grown and annealed (ga,mn)as layers
文献类型：期刊论文
| 作者 | Deng, J. J.; Zhao, J. H.; Tan, P. H.; Bi, J. F.; Gan, H. D.; Niu, Z. C.; Wu, X. G. |
| 刊名 | Journal of magnetism and magnetic materials
 |
| 出版日期 | 2007 |
| 卷号 | 308期号:2页码:313-317 |
| 关键词 | Magnetic semiconductors Electrical and magnetic properties (related to treatment conditions) Raman spectra Molecular-beam epitaxy |
| ISSN号 | 0304-8853 |
| DOI | 10.1016/j.jmmm.2006.06.007 |
| 通讯作者 | Zhao, j. h.(jhzhao@red.semi.ac.cn) |
| 英文摘要 | The depth distribution of the hole density p in 500 nm-thick (ga,mn)as layers is investigated. from raman scattering spectra, it is found that the gradients of p are opposite in the as-grown and annealed layers. at the region around the free surface, with increasing etching depth, p significantly increases in the as-grown layer; however, p decreases distinctly in the annealed layer. then, in the bulk, p becomes almost homogeneous for both cases. the etching-depth dependence of curie temperature obtained from magnetic measurements is in agreement with the distribution characterization of p. these results suggest that annealing induces outdiffusion of mn interstitials towards the free surface, and incomplete outdiffusion during the growth leads to an accumulation of mn interstitials around the free surface of the as-grown (ga,mn)as. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | CURIE-TEMPERATURE ; GA1-XMNXAS ; SEMICONDUCTORS ; FERROMAGNETISM ; EPILAYERS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000241713600020 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426942 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, J. H. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng, J. J.,Zhao, J. H.,Tan, P. H.,et al. Two opposite gradients of hole density in as-grown and annealed (ga,mn)as layers[J]. Journal of magnetism and magnetic materials,2007,308(2):313-317. |
| APA | Deng, J. J..,Zhao, J. H..,Tan, P. H..,Bi, J. F..,Gan, H. D..,...&Wu, X. G..(2007).Two opposite gradients of hole density in as-grown and annealed (ga,mn)as layers.Journal of magnetism and magnetic materials,308(2),313-317. |
| MLA | Deng, J. J.,et al."Two opposite gradients of hole density in as-grown and annealed (ga,mn)as layers".Journal of magnetism and magnetic materials 308.2(2007):313-317. |
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来源：半导体研究所
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