A comparison between aln films grown by mocvd using dimethylethylamine alane and trimethylaluminium as the aluminium precursors
文献类型：期刊论文
| 作者 | Hu Wei-Guo; Liu Xiang-Lin; Zhang Pan-Feng; Zhao Feng-Ai; Jiao Chun-Mei; Wei Hong-Yuan; Zhang Ri-Qing; Wu Jie-Jun; Cong Guang-Wei; Pan Yi |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2007-02-01 |
| 卷号 | 24期号:2页码:516-518 |
| ISSN号 | 0256-307X |
| 通讯作者 | Hu wei-guo(sivamay@semi.ac.cn) |
| 英文摘要 | Aluminium nitride (aln) films grown with dimethylethylamine alane (dmeaa) are compared with the ones grown with trimethylaluminium (tma). in the high-resolution x-ray diffraction omega scans, the full width at half maximum (fwhm) of (0002) aln films grown with dmeaa is about 0.70 deg, while the fwhm of (0002) aln films grown with tma is only 0.11 deg. the surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. the rms roughness of aln films grown with dmeaa is 47.4 nm, and grown with tma is 69.4 nn. although using dmeaa as the aluminium precursor cannot improve the aln crystal quality, aln growth can be reached at low temperature of 673 k. thus, dmeaa is an alternative aluminium precursor to deposit aln film at low growth temperatures. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; GAN BUFFER LAYERS ; OPTICAL-PROPERTIES ; NM ; TEMPERATURES ; SUBSTRATE ; EPITAXY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000244116400059 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426946 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hu Wei-Guo |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Nanjing Univ, Dept Chem, Nanjing 210093, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu Wei-Guo,Liu Xiang-Lin,Zhang Pan-Feng,et al. A comparison between aln films grown by mocvd using dimethylethylamine alane and trimethylaluminium as the aluminium precursors[J]. Chinese physics letters,2007,24(2):516-518. |
| APA | Hu Wei-Guo.,Liu Xiang-Lin.,Zhang Pan-Feng.,Zhao Feng-Ai.,Jiao Chun-Mei.,...&Pan Yi.(2007).A comparison between aln films grown by mocvd using dimethylethylamine alane and trimethylaluminium as the aluminium precursors.Chinese physics letters,24(2),516-518. |
| MLA | Hu Wei-Guo,et al."A comparison between aln films grown by mocvd using dimethylethylamine alane and trimethylaluminium as the aluminium precursors".Chinese physics letters 24.2(2007):516-518. |
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来源：半导体研究所
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