Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate
文献类型：期刊论文
| 作者 | Wang, Xiaoliang; Wang, Cuimei; Hu, Guoxin; Mao, Hongling; Fang, Cebao; Wang, Junxi; Ran, Junxue; Li, Hanping; Li, Jinmin; Wang, Zhanguo |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298页码:791-793 |
| 关键词 | 2deg Electron mobility Mocvd Semiconducting iii-v materials Hemt |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.10.217 |
| 通讯作者 | Wang, xiaoliang() |
| 英文摘要 | High-mobility al0.3ga0.7n/aln/gan high electron mobility transistors (hemt) structure has been grown by metalorganic chemical vapor deposition (mocvd) on sapphire substrate. electron mobility of 2185 cm(2)/v s at room temperature and 15,400 cm(2)/v s at 80 k with 2deg density of 1.1 x 10(13) cm(-2) are achieved. the corresponding sheet resistance of the hemt wafer is 258.7 omega/sq. the aln interfacial layer between the gan buffer and the algan barrier layer reduces the alloy disorder scattering. x-ray diffraction (xrd), atomic force microscopy (afm) and transmission electron microscopy (tem) measurements have been conducted, and confirmed that the wafer has a high crystal quality. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | ALGAN/GAN HETEROSTRUCTURES ; ELECTRON-MOBILITY ; PERFORMANCE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244622600184 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426950 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Xiaoliang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Xiaoliang,Wang, Cuimei,Hu, Guoxin,et al. Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate[J]. Journal of crystal growth,2007,298:791-793. |
| APA | Wang, Xiaoliang.,Wang, Cuimei.,Hu, Guoxin.,Mao, Hongling.,Fang, Cebao.,...&Wang, Zhanguo.(2007).Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate.Journal of crystal growth,298,791-793. |
| MLA | Wang, Xiaoliang,et al."Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate".Journal of crystal growth 298(2007):791-793. |
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来源：半导体研究所
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