Stability of gaas photocathodes under different intensities of illumination
文献类型：期刊论文
| 作者 | Zou Ji-Jun; Chang Ben-Kang; Yang Zhi; Gao Pin; Qiao Jian-Liang; Zeng Yi-Pine |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-10-01 |
| 卷号 | 56期号:10页码:6109-6113 |
| 关键词 | Gaas photocathode Stability Quantum efficiency Surface potential barrier |
| ISSN号 | 1000-3290 |
| 通讯作者 | Chang ben-kang(bkchang@mail.njust.edu.cn) |
| 英文摘要 | The photocurrent curves of reflection-mode gaas photocathodes as a function of time, when were illuminated by white light with an intensity of 0, 33 and 100 ix, respectively, were measured using a multi-information measurement system. the calculated lifetimes of cathodes are 320, 160 and 75 min, respectively, showing that the stability of cathodes degraded with the increase of light intensity. the lifetime of cathode, illuminated by white light with an intensity of 100 ix, while no photocurrent was being drawn during the illumination, was 100 min. through comparison, we found that the influence of illumination on cathodes stability is greater than that of photocurrent. the quantum-yield curves of cathodes as a functions of time, when illuminated by white light with an intensity of 33 ix, were measured also. the measured results show that the shape of the yield curves changes with increasing illumination time due to the faster quantum-yield degradation rate of low energy photons. based on the revised quantum-efficiency equations for the reflection-mode cathodes, the variation of yield curves are analyzed to be due to the intervalley diffusion of photoelectrons and the evolution of the surface potential barrier profile of the photocathodes during degradation process. |
| WOS关键词 | ELECTRON-AFFINITY PHOTOCATHODES ; PHOTOEMISSION ; OXYGEN ; GAAS(100) ; SURFACE ; CS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000250313000094 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426951 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chang Ben-Kang |
| 作者单位 | 1.Nanjing Univ Sci & Technol, Inst Elect Engn & Opto Elect Technol, Nanjing 210094, Peoples R China 2.E China Inst Technol, Dept Elect Engn, Fuzhou 344000, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zou Ji-Jun,Chang Ben-Kang,Yang Zhi,et al. Stability of gaas photocathodes under different intensities of illumination[J]. Acta physica sinica,2007,56(10):6109-6113. |
| APA | Zou Ji-Jun,Chang Ben-Kang,Yang Zhi,Gao Pin,Qiao Jian-Liang,&Zeng Yi-Pine.(2007).Stability of gaas photocathodes under different intensities of illumination.Acta physica sinica,56(10),6109-6113. |
| MLA | Zou Ji-Jun,et al."Stability of gaas photocathodes under different intensities of illumination".Acta physica sinica 56.10(2007):6109-6113. |
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来源：半导体研究所
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