Fabrication and structure properties of gan nanowires by ammoniating ga2o3 films
文献类型：期刊论文
| 作者 | Xue, Shoubin; Zhuang, Huizhao; Li, Baoli; Hu, Lijun; Zhang, Shiying; Xue, Chengshan |
| 刊名 | Materials letters
 |
| 出版日期 | 2007-07-01 |
| 卷号 | 61期号:18页码:3867-3869 |
| 关键词 | Gan nanowires Single crystal Ammoniating technique Deposition |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2006.12.049 |
| 通讯作者 | Zhuang, huizhao(zhuanghuizhao@sdnu.edu.cn) |
| 英文摘要 | The gan nanowires were successfully synthesized on si(111) substrates by ammoniating the ga2o3/zno films at 900 degrees c. the structure and morphology of the as-prepared gan nanowires were studied by x-ray diffraction (xrd), fourier transform infrared spectrum (ftir), scanning electron microscopy (sem) and field-emission transmission electron microscopy (fetem). the results show that the single-crystal gan nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. finally, the growth mechanism is also briefly discussed. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | GALLIUM NITRIDE ; NANORODS ; ABSORPTION ; GROWTH ; CARBON |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000248189100022 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426962 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, Huizhao |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Shoubin,Zhuang, Huizhao,Li, Baoli,et al. Fabrication and structure properties of gan nanowires by ammoniating ga2o3 films[J]. Materials letters,2007,61(18):3867-3869. |
| APA | Xue, Shoubin,Zhuang, Huizhao,Li, Baoli,Hu, Lijun,Zhang, Shiying,&Xue, Chengshan.(2007).Fabrication and structure properties of gan nanowires by ammoniating ga2o3 films.Materials letters,61(18),3867-3869. |
| MLA | Xue, Shoubin,et al."Fabrication and structure properties of gan nanowires by ammoniating ga2o3 films".Materials letters 61.18(2007):3867-3869. |
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来源：半导体研究所
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