Inas0.3sb0.7 films grown on (100) gasb substrates with a buffer layer by liquid-phase epitaxy
文献类型：期刊论文
| 作者 | Gao, Fubao; Chen, NuoFu; Liu, Lei; Zhang, X. W.; Wu, Jinliang; Yin, Zhigang |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007-06-15 |
| 卷号 | 304期号:2页码:472-475 |
| 关键词 | Crystal structure Liquid-phase epitaxy Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2007.03.011 |
| 通讯作者 | Gao, fubao(fbgao@semi.ac.cn) |
| 英文摘要 | The growth of inasxsb1-x films on (100) gasb substrates by liquid-phase epitaxy (lpe) has been investigated and epitaxial inas0.3sb0.7 films with inas0.9sb0.09 buffer layers have been successfully obtained. the low x-ray rocking curve fhwm values of inas0.3sb0.7 layer shows the high quality of crystal-orientation structure. hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) v-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (rt). the in as0.3sb0.7 films grown on (10 0) gasb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; TRANSPORT-PROPERTIES ; INAS1-XSBX ; ALLOYS ; INASSB ; INSB ; GAP ; PHOTOLUMINESCENCE ; INASXSB1-X/GAAS ; SUPERLATTICES |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000247419600030 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426965 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, Fubao |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Fubao,Chen, NuoFu,Liu, Lei,et al. Inas0.3sb0.7 films grown on (100) gasb substrates with a buffer layer by liquid-phase epitaxy[J]. Journal of crystal growth,2007,304(2):472-475. |
| APA | Gao, Fubao,Chen, NuoFu,Liu, Lei,Zhang, X. W.,Wu, Jinliang,&Yin, Zhigang.(2007).Inas0.3sb0.7 films grown on (100) gasb substrates with a buffer layer by liquid-phase epitaxy.Journal of crystal growth,304(2),472-475. |
| MLA | Gao, Fubao,et al."Inas0.3sb0.7 films grown on (100) gasb substrates with a buffer layer by liquid-phase epitaxy".Journal of crystal growth 304.2(2007):472-475. |
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来源：半导体研究所
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