Spatial variation of optical and structural properties of elo gan directly grown on patterned sapphire by hvpe
文献类型：期刊论文
| 作者 | Wei, T. B.; Duan, R. F.; Wang, J. X.; Li, J. M.; Huo, Z. Q.; Ma, P.; Liu, Z.; Zeng, Y. P. |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2007-05-07 |
| 卷号 | 40期号:9页码:2881-2885 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/40/9/032 |
| 通讯作者 | Wei, t. b.() |
| 英文摘要 | A 275 mu m thick gan layer was directly grown on the sio2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (hvpe) reactor. the variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-raman spectroscopy in a cross section of the thick film. the d x-0(a) line with the fwhm of 5.1 mev and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick gan epitaxial layer. optically active regions appeared above the sio2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. the crystalline quality was improved by increasing the thickness of the gan/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. the x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (elo) gan. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; LATERALLY OVERGROWN GAN ; INVERSION DOMAINS ; GALLIUM NITRIDE ; LAYERS ; CATHODOLUMINESCENCE ; BOUNDARIES ; EFFICIENT ; ORIGIN ; DIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000246568800043 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426969 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, T. B. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, T. B.,Duan, R. F.,Wang, J. X.,et al. Spatial variation of optical and structural properties of elo gan directly grown on patterned sapphire by hvpe[J]. Journal of physics d-applied physics,2007,40(9):2881-2885. |
| APA | Wei, T. B..,Duan, R. F..,Wang, J. X..,Li, J. M..,Huo, Z. Q..,...&Zeng, Y. P..(2007).Spatial variation of optical and structural properties of elo gan directly grown on patterned sapphire by hvpe.Journal of physics d-applied physics,40(9),2881-2885. |
| MLA | Wei, T. B.,et al."Spatial variation of optical and structural properties of elo gan directly grown on patterned sapphire by hvpe".Journal of physics d-applied physics 40.9(2007):2881-2885. |
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来源：半导体研究所
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