Rapid photoluminescence quenching in gainnas quantum wells at low temperature
文献类型：期刊论文
| 作者 | Sun, Z.; Yang, X. D.; Sun, B. Q.; Ji, Y.; Zhang, S. Y.; Ni, H. Q.; Niu, Z. C.; Xu, Z. Y. |
| 刊名 | Journal of luminescence
 |
| 出版日期 | 2007 |
| 卷号 | 122页码:188-190 |
| 关键词 | Gainnas/gaas Photoluminescence quenching Non-radiative recombination |
| ISSN号 | 0022-2313 |
| DOI | 10.1016/j.jlumin.2006.01.086 |
| 通讯作者 | Sun, z.(sz3288@red.semi.ac.cn) |
| 英文摘要 | Temperature dependence of optical properties of gainnas/gaas quantum wells (qws) has been studied by photoluminescence (pl) and time-resolved pl. a rapid pl quenching is observed even at very low temperature and is of the excitation power dependence. these results strongly suggest that the non-radiative recombination process plays a very important role at low temperature. in the trpl measurement the shape of the pl decay curve shows significant difference under different excitation powers. it is attributed to the different involvement of non-radiative recombination in the overall recombination process. the trpl data are well fitted with the rate equation involving both the radiative and non-radiative recombination. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | EXCITATION |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000242991900057 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426972 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, Z. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, Z.,Yang, X. D.,Sun, B. Q.,et al. Rapid photoluminescence quenching in gainnas quantum wells at low temperature[J]. Journal of luminescence,2007,122:188-190. |
| APA | Sun, Z..,Yang, X. D..,Sun, B. Q..,Ji, Y..,Zhang, S. Y..,...&Xu, Z. Y..(2007).Rapid photoluminescence quenching in gainnas quantum wells at low temperature.Journal of luminescence,122,188-190. |
| MLA | Sun, Z.,et al."Rapid photoluminescence quenching in gainnas quantum wells at low temperature".Journal of luminescence 122(2007):188-190. |
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来源：半导体研究所
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