中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electrical and optical properties of inas/gaas quantum dots doped by high energy mn implantation

文献类型:期刊论文

作者Hu Liang-Jun; Chen Yong-Hai; Ye Xiao-Ling; Wang Zhan-Guo
刊名Acta physica sinica
出版日期2007-08-01
卷号56期号:8页码:4930-4935
关键词Ion implantation Inas/gaas quantum dot Photoluminescence Clusters
ISSN号1000-3290
通讯作者Hu liang-jun(liangjun_hu@yahoo.com.cn)
英文摘要Mn ions were doped into inas/gaas quantum dots samples by high energy. implantation and subsequent annealing. the optical and electric properties of the samples have been studied. the photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. by studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. the latter change in the photoluminescence peaks is probably attributed to that mn ions entering the inas quantum dots, which release the strain of the quantum dots. for the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 k.
WOS关键词DILUTED MAGNETIC SEMICONDUCTOR ; PROTON IMPLANTATION ; GAAS ; TEMPERATURES ; CLUSTERS ; MAGNETORESISTANCE ; INTERDIFFUSION ; NANOCLUSTERS ; (GA,MN)AS ; LAYERS
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000248684800093
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426974
专题半导体研究所
通讯作者Hu Liang-Jun
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Hu Liang-Jun,Chen Yong-Hai,Ye Xiao-Ling,et al. Electrical and optical properties of inas/gaas quantum dots doped by high energy mn implantation[J]. Acta physica sinica,2007,56(8):4930-4935.
APA Hu Liang-Jun,Chen Yong-Hai,Ye Xiao-Ling,&Wang Zhan-Guo.(2007).Electrical and optical properties of inas/gaas quantum dots doped by high energy mn implantation.Acta physica sinica,56(8),4930-4935.
MLA Hu Liang-Jun,et al."Electrical and optical properties of inas/gaas quantum dots doped by high energy mn implantation".Acta physica sinica 56.8(2007):4930-4935.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。