中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers

文献类型:期刊论文

作者Peng Hong-Ling; Han Qin; Yang Xiao-Hong; Niu Zhi-Chuan
刊名Acta physica sinica
出版日期2007-02-01
卷号56期号:2页码:863-870
关键词Quantum dots Vertical-cavity surface-emitting laser Differential gain 3 db bandwidth
ISSN号1000-3290
通讯作者Peng hong-ling()
英文摘要Some important parameters, such as gain, 3 db bandwidth and threshold current of 1.3 mu m quantum dot vertical-cavity surface-emitting laser (qd vcsel) are theoretically investigated. some methods are developed to improve the vcsel's modulation response. significant improvement are prediced for p-type modulation doping. in connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped dbr is much better suited to high speed quantum dot vcsels. the parasitic effects of the vcsel are,analyzed and the influence of packaging of the vcsel on its modulation responds is analyzed.
WOS关键词MOLECULAR-BEAM EPITAXY ; DENSITY-OF-STATES ; HIGH-SPEED ; PERFORMANCE ; EFFICIENCY ; DESIGN ; VCSELS ; GAIN
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000243986600041
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426975
专题半导体研究所
通讯作者Peng Hong-Ling
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Peng Hong-Ling,Han Qin,Yang Xiao-Hong,et al. Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers[J]. Acta physica sinica,2007,56(2):863-870.
APA Peng Hong-Ling,Han Qin,Yang Xiao-Hong,&Niu Zhi-Chuan.(2007).Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers.Acta physica sinica,56(2),863-870.
MLA Peng Hong-Ling,et al."Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers".Acta physica sinica 56.2(2007):863-870.

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来源:半导体研究所

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