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Chinese Academy of Sciences Institutional Repositories Grid
Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy

文献类型:期刊论文

作者Tangring, I.; Wang, S. M.; Sadeghi, M.; Larsson, A.; Wang, X. D.
刊名Journal of crystal growth
出版日期2007-04-01
卷号301页码:971-974
关键词Metamorphic growth Molecular beam epitaxy Semiconducting iii-v materials Laser diodes
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2006.11.171
通讯作者Tangring, i.(ivar.tangring@mc2.chalmers.se)
英文摘要We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on gaas by molecular beam epitaxy (mbe) using an alloy-graded buffer layer (gbl). use of be in the gbl is effective to reduce surface/interface roughness and improves optical quality. the rms surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). cross-sectional transmission electron microscopy (tem) images confirm that most dislocations are blocked in the gbl. ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. the average threshold current under the pulsed excitation is in 170-200 ma for a cavity length of 0.9-1.5 mm. this value can be further reduced to about 100 ma by high-reflectivity coating. lasers can work in an ambient temperature up to at least 50 degrees c. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词DOT LASERS ; RANGE ; OPERATION
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000246015800224
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426986
专题半导体研究所
通讯作者Tangring, I.
作者单位1.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
2.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Tangring, I.,Wang, S. M.,Sadeghi, M.,et al. Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy[J]. Journal of crystal growth,2007,301:971-974.
APA Tangring, I.,Wang, S. M.,Sadeghi, M.,Larsson, A.,&Wang, X. D..(2007).Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy.Journal of crystal growth,301,971-974.
MLA Tangring, I.,et al."Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy".Journal of crystal growth 301(2007):971-974.

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来源:半导体研究所

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