Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Tangring, I.; Wang, S. M.; Sadeghi, M.; Larsson, A.; Wang, X. D. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007-04-01 |
| 卷号 | 301页码:971-974 |
| 关键词 | Metamorphic growth Molecular beam epitaxy Semiconducting iii-v materials Laser diodes |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.11.171 |
| 通讯作者 | Tangring, i.(ivar.tangring@mc2.chalmers.se) |
| 英文摘要 | We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on gaas by molecular beam epitaxy (mbe) using an alloy-graded buffer layer (gbl). use of be in the gbl is effective to reduce surface/interface roughness and improves optical quality. the rms surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). cross-sectional transmission electron microscopy (tem) images confirm that most dislocations are blocked in the gbl. ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. the average threshold current under the pulsed excitation is in 170-200 ma for a cavity length of 0.9-1.5 mm. this value can be further reduced to about 100 ma by high-reflectivity coating. lasers can work in an ambient temperature up to at least 50 degrees c. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | DOT LASERS ; RANGE ; OPERATION |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000246015800224 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426986 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tangring, I. |
| 作者单位 | 1.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden 2.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tangring, I.,Wang, S. M.,Sadeghi, M.,et al. Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy[J]. Journal of crystal growth,2007,301:971-974. |
| APA | Tangring, I.,Wang, S. M.,Sadeghi, M.,Larsson, A.,&Wang, X. D..(2007).Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy.Journal of crystal growth,301,971-974. |
| MLA | Tangring, I.,et al."Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy".Journal of crystal growth 301(2007):971-974. |
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来源：半导体研究所
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