Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with movpe
文献类型：期刊论文
| 作者 | Ding, Ying; Zhou, Fan; Chen, Wei-xi; Wang, Wei |
| 刊名 | Journal of luminescence
 |
| 出版日期 | 2007 |
| 卷号 | 122页码:176-178 |
| 关键词 | Buried heterostructure (bh) Superluminescent diode (slds) Grade-strained bulk ingaas |
| ISSN号 | 0022-2313 |
| DOI | 10.1016/j.jlumin.2006.01.077 |
| 通讯作者 | Ding, ying(yingding@red.semi.ac.cn) |
| 英文摘要 | A novel unselective regrowth buried heterostructure (bh) long-wavelength superluminescent diode (sld), which has a grade-strained bulk ingaas active region, was developed by metalorganic vapor-phase epitaxy (movpe). the 3 db emission spectrum bandwidth of the sld is about 65 nm with the range from 1596 to 1661 nm at 90 ma and front 1585 to 1650 nm at 150 ma. an output power of 3.5 mw is obtained at 200 ma injection current under cw operation at room temperature. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | HIGH-POWER |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000242991900053 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426989 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, Ying |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Peking Univ, Sch Phys, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ding, Ying,Zhou, Fan,Chen, Wei-xi,et al. Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with movpe[J]. Journal of luminescence,2007,122:176-178. |
| APA | Ding, Ying,Zhou, Fan,Chen, Wei-xi,&Wang, Wei.(2007).Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with movpe.Journal of luminescence,122,176-178. |
| MLA | Ding, Ying,et al."Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with movpe".Journal of luminescence 122(2007):176-178. |
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来源：半导体研究所
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