Recent advances in synthesis and properties of cubic boron nitride films
文献类型:期刊论文
作者 | Zhang Xing-Wang; You Jing-Bi; Chen Nuo-Fu |
刊名 | Journal of inorganic materials
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出版日期 | 2007-05-01 |
卷号 | 22期号:3页码:385-390 |
关键词 | Cubic boron nitride (c-bn) films Heteroepitaxy Stress Adhesion |
ISSN号 | 1000-324X |
通讯作者 | Zhang xing-wang(xwzhang@semi.ac.cn) |
英文摘要 | Cubic boron nitride (c-bn) attracts widespread interest as a promising material for many potential applications because of its unique physical and chemical properties. since the 1980's the research in c-bn thin films has been carried out, which reached its summit in the mid of 1990's, then turned into a downward period. in the past few years, however, important progress was achieved in synthesis and properties of cubic boron nitride films, such as obtaining > 1 mu m thick c-bn films, epitaxial growth of single crystalline c-bn films, and advances in mechanics properties and microstructures of the interlayer of c-bn films. the present article reviews the current status of the synthesis and properties of c-bn thin films. |
WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; BEAM-ASSISTED DEPOSITION ; BN THIN-FILMS ; C-BN ; CBN FILMS ; HIGH-PRESSURE ; GROWTH ; DIAMOND ; SILICON ; QUALITY |
WOS研究方向 | Materials Science |
WOS类目 | Materials Science, Ceramics |
语种 | 英语 |
WOS记录号 | WOS:000246716400001 |
出版者 | SCIENCE CHINA PRESS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426990 |
专题 | 半导体研究所 |
通讯作者 | Zhang Xing-Wang |
作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang Xing-Wang,You Jing-Bi,Chen Nuo-Fu. Recent advances in synthesis and properties of cubic boron nitride films[J]. Journal of inorganic materials,2007,22(3):385-390. |
APA | Zhang Xing-Wang,You Jing-Bi,&Chen Nuo-Fu.(2007).Recent advances in synthesis and properties of cubic boron nitride films.Journal of inorganic materials,22(3),385-390. |
MLA | Zhang Xing-Wang,et al."Recent advances in synthesis and properties of cubic boron nitride films".Journal of inorganic materials 22.3(2007):385-390. |
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来源:半导体研究所
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