中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Recent advances in synthesis and properties of cubic boron nitride films

文献类型:期刊论文

作者Zhang Xing-Wang; You Jing-Bi; Chen Nuo-Fu
刊名Journal of inorganic materials
出版日期2007-05-01
卷号22期号:3页码:385-390
关键词Cubic boron nitride (c-bn) films Heteroepitaxy Stress Adhesion
ISSN号1000-324X
通讯作者Zhang xing-wang(xwzhang@semi.ac.cn)
英文摘要Cubic boron nitride (c-bn) attracts widespread interest as a promising material for many potential applications because of its unique physical and chemical properties. since the 1980's the research in c-bn thin films has been carried out, which reached its summit in the mid of 1990's, then turned into a downward period. in the past few years, however, important progress was achieved in synthesis and properties of cubic boron nitride films, such as obtaining > 1 mu m thick c-bn films, epitaxial growth of single crystalline c-bn films, and advances in mechanics properties and microstructures of the interlayer of c-bn films. the present article reviews the current status of the synthesis and properties of c-bn thin films.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; BEAM-ASSISTED DEPOSITION ; BN THIN-FILMS ; C-BN ; CBN FILMS ; HIGH-PRESSURE ; GROWTH ; DIAMOND ; SILICON ; QUALITY
WOS研究方向Materials Science
WOS类目Materials Science, Ceramics
语种英语
WOS记录号WOS:000246716400001
出版者SCIENCE CHINA PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2426990
专题半导体研究所
通讯作者Zhang Xing-Wang
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang Xing-Wang,You Jing-Bi,Chen Nuo-Fu. Recent advances in synthesis and properties of cubic boron nitride films[J]. Journal of inorganic materials,2007,22(3):385-390.
APA Zhang Xing-Wang,You Jing-Bi,&Chen Nuo-Fu.(2007).Recent advances in synthesis and properties of cubic boron nitride films.Journal of inorganic materials,22(3),385-390.
MLA Zhang Xing-Wang,et al."Recent advances in synthesis and properties of cubic boron nitride films".Journal of inorganic materials 22.3(2007):385-390.

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来源:半导体研究所

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