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Chinese Academy of Sciences Institutional Repositories Grid
Correlation between optical and structural properties of (al,ga)n layers grown by mocvd

文献类型:期刊论文

作者Jahn, Uwe; Jiang, De-Sheng; Ploog, Klaus H.; Wang, Xiaolan; Zha, Degang; Yang, Hui
刊名Physica status solidi a-applications and materials science
出版日期2007
卷号204期号:1页码:294-298
ISSN号0031-8965
DOI10.1002/pssa.200673538
通讯作者Jahn, uwe(ujahn@pdi-berlin.de)
英文摘要For both, (al,ga)n with low al content grown on a gan nucleation layer and (ai,ga)n with high al content gown on an aln nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. in the former system, defect regions exhibit a much lower al content than the nominal one leading to a splitting of the respective luminescence spectra. in the latter system, a domain-like growth is observed with a pyramidal surface morphology and non-radiative recombination within the domain boundaries. (c) 2007 wileynch verlag gmbh & co. kgaa, weinheim.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; INVERSION DOMAINS ; MORPHOLOGY ; ALGAN
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000243787000042
出版者WILEY-V C H VERLAG GMBH
URI标识http://www.irgrid.ac.cn/handle/1471x/2426992
专题半导体研究所
通讯作者Jahn, Uwe
作者单位1.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Jahn, Uwe,Jiang, De-Sheng,Ploog, Klaus H.,et al. Correlation between optical and structural properties of (al,ga)n layers grown by mocvd[J]. Physica status solidi a-applications and materials science,2007,204(1):294-298.
APA Jahn, Uwe,Jiang, De-Sheng,Ploog, Klaus H.,Wang, Xiaolan,Zha, Degang,&Yang, Hui.(2007).Correlation between optical and structural properties of (al,ga)n layers grown by mocvd.Physica status solidi a-applications and materials science,204(1),294-298.
MLA Jahn, Uwe,et al."Correlation between optical and structural properties of (al,ga)n layers grown by mocvd".Physica status solidi a-applications and materials science 204.1(2007):294-298.

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来源:半导体研究所

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