Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd
文献类型：期刊论文
| 作者 | Zhao, Yongmei; Sun, Guosheng; Liu, Xingfang; Li, Jiaye; Zhao, Wanshun; Wang, Lei; Luo, Muchang; Li, Jinmin |
| 刊名 | Modern physics letters b
 |
| 出版日期 | 2007-09-20 |
| 卷号 | 21期号:22页码:1437-1445 |
| 关键词 | Aluminum nitride Low pressure metalorganic chemical vapor deposition (lp-mocvd) V/iii ratio Preferential orientation growth mechanism |
| ISSN号 | 0217-9849 |
| 通讯作者 | Zhao, yongmei(ymzhao@semi.ac.cn) |
| 英文摘要 | Aluminum nitride (ain) thin films were deposited on si (111) substrates by low pressure metalorganic chemical vapor deposition system. the effects of the v/iii ratios on the film structure and surface morphology were systematically studied. the chemical states and vibration modes of ain films were characterized by x-ray photoelectron spectroscopy and fourier transform infrared spectrometer. the optical absorption property of the ain films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. the ain (002) preferential orientation growth was obtained at the v/iii ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the ain growth. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; ALUMINUM NITRIDE FILMS ; ALN BUFFER LAYER ; LOW-TEMPERATURE ; SI |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
| 语种 | 英语 |
| WOS记录号 | WOS:000251972800001 |
| 出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426996 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Yongmei |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Yongmei,Sun, Guosheng,Liu, Xingfang,et al. Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd[J]. Modern physics letters b,2007,21(22):1437-1445. |
| APA | Zhao, Yongmei.,Sun, Guosheng.,Liu, Xingfang.,Li, Jiaye.,Zhao, Wanshun.,...&Li, Jinmin.(2007).Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd.Modern physics letters b,21(22),1437-1445. |
| MLA | Zhao, Yongmei,et al."Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd".Modern physics letters b 21.22(2007):1437-1445. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。