Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors
文献类型：期刊论文
| 作者 | Zhang, Wancheng; Nishiguchi, Katsuhiko; Ono, Yukinori; Fujiwara, Akira; Yamaguchi, Hiroshi; Inokawa, Hiroshi; Takahashi, Yasuo; Wu, Nan-Jian |
| 刊名 | Ieice transactions on electronics
 |
| 出版日期 | 2007-05-01 |
| 卷号 | E90c期号:5页码:943-948 |
| 关键词 | Single-electron Mosfet Turnstile Single-electron detection |
| ISSN号 | 0916-8524 |
| DOI | 10.1093/ietele/e90-c.5.943 |
| 通讯作者 | Zhang, wancheng() |
| 英文摘要 | A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. the turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (mosfets) alternately, allows current quantization at 20 k due to single-electron transfer. another mosfet is placed at the drain side of the turnstile to form an electron storage island. therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. the correspondence between the quantized current and the single-electron counting was confirmed. |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| 语种 | 英语 |
| WOS记录号 | WOS:000246819000006 |
| 出版者 | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426998 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Wancheng |
| 作者单位 | 1.NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan 4.Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, Wancheng,Nishiguchi, Katsuhiko,Ono, Yukinori,et al. Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors[J]. Ieice transactions on electronics,2007,E90c(5):943-948. |
| APA | Zhang, Wancheng.,Nishiguchi, Katsuhiko.,Ono, Yukinori.,Fujiwara, Akira.,Yamaguchi, Hiroshi.,...&Wu, Nan-Jian.(2007).Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors.Ieice transactions on electronics,E90c(5),943-948. |
| MLA | Zhang, Wancheng,et al."Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors".Ieice transactions on electronics E90c.5(2007):943-948. |
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来源：半导体研究所
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