Unusual carrier thermalization in a dilute gaas1-xnx alloy
文献类型：期刊论文
| 作者 | Tan, P. H.; Xu, Z. Y.; Luo, X. D.; Ge, W. K.; Zhang, Y.; Mascarenhas, A.; Xin, H. P.; Tu, C. W. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2007-02-05 |
| 卷号 | 90期号:6页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2454552 |
| 通讯作者 | Tan, p. h.(pt290@cam.ac.uk) |
| 英文摘要 | Photoluminescence (pl) properties of the e-0, e-0+delta(0), and e+ bands in an x=0.62% gaas1-xnx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-pl. the hot electrons within the e+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its pl peak energy by >2k(b)t, suggesting peculiar density of states and carrier dynamics of the e+ band. |
| WOS关键词 | PHOTOLUMINESCENCE ; DEPENDENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244162300022 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427002 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tan, P. H. |
| 作者单位 | 1.Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Natl Renewable Energy Lab, Golden, CO 80401 USA 4.Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA |
| 推荐引用方式 GB/T 7714 | Tan, P. H.,Xu, Z. Y.,Luo, X. D.,et al. Unusual carrier thermalization in a dilute gaas1-xnx alloy[J]. Applied physics letters,2007,90(6):3. |
| APA | Tan, P. H..,Xu, Z. Y..,Luo, X. D..,Ge, W. K..,Zhang, Y..,...&Tu, C. W..(2007).Unusual carrier thermalization in a dilute gaas1-xnx alloy.Applied physics letters,90(6),3. |
| MLA | Tan, P. H.,et al."Unusual carrier thermalization in a dilute gaas1-xnx alloy".Applied physics letters 90.6(2007):3. |
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来源：半导体研究所
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