Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers
文献类型：期刊论文
| 作者 | Zhou Wen-Zheng; Lin Tie; Shang Li-Yan; Huang Zhi-Ming; Zhu Bo; Cui Li-Jie; Gao Hong-Ling; Li Dong-Lin; Guo Shao-Ling; Gui Yong-Sheng |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-07-01 |
| 卷号 | 56期号:7页码:4143-4147 |
| 关键词 | Sdh oscillation Two-dimensional electron gas Fft analysis Self-consistently calculation |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhou wen-zheng() |
| 英文摘要 | Magneto-transport measurements have been carried out on a si delta-doped in0.65ga0.35as/in0.52al0.48as metamorphic high-electron-mobility transistor with inp substrate in a temperature range between 1.5 and 60 k under magnetic field up to 13 t. we studied the shubnikov-de haas (sdh) effect and the hall effect for the in0.65ga0.35as/in0.52al0.48as single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. we solve the schrodinger-kohn-sham equation in conjunction with the poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the fermi energy. the calculational results are well consistent with the results of experiments. both experimental and calculational results indicate that almost all of the delta-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 k. |
| WOS关键词 | QUANTUM-WELLS ; MOBILITY TRANSISTOR ; SPIN-ORBIT ; CHANNEL ; HETEROSTRUCTURES ; HETEROJUNCTION ; SCATTERING ; INDIUM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000248134500084 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427007 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou Wen-Zheng |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Guangxi Univ, Coll Phys Sci & Engn Technol, Nanning 530004, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 4.E China Normal Univ, Joint Lab Imaging Informat, ECNU, SITP, Shanghai 200062, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou Wen-Zheng,Lin Tie,Shang Li-Yan,et al. Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers[J]. Acta physica sinica,2007,56(7):4143-4147. |
| APA | Zhou Wen-Zheng.,Lin Tie.,Shang Li-Yan.,Huang Zhi-Ming.,Zhu Bo.,...&Chu Jun-Hao.(2007).Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers.Acta physica sinica,56(7),4143-4147. |
| MLA | Zhou Wen-Zheng,et al."Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers".Acta physica sinica 56.7(2007):4143-4147. |
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