The influence of aln/gan superlattice intermediate layer on the properties of gan grown on si(111) substrates
文献类型：期刊论文
| 作者 | Liu Zhe; Wang Xiao-Liang; Wang Jun-Xi; Hu Guo-Xin; Guo Lun-Chun; Li Jin-Min |
| 刊名 | Chinese physics
 |
| 出版日期 | 2007-05-01 |
| 卷号 | 16期号:5页码:1467-1471 |
| 关键词 | Gan Si substrate Metalorganic chemical vapour deposition Superlattice buffer |
| ISSN号 | 1009-1963 |
| 通讯作者 | Liu zhe(liuzhe@red.semi.ac.cn) |
| 英文摘要 | Aln/gan superlattice buffer is inserted between gan epitaxial layer and si substrate before epitaxial growth of gan layer. high-quality and crack-free gan epitaxial layers can be obtained by inserting aln/gan superlattice buffer layer. the influence of aln/gan superlattice buffer layer on the properties of gan films are investigated in this paper. one of the important roles of the superlattice is to release tensile strain between si substrate and epilayer. raman spectra show a substantial decrease of in-plane tensile strain in gan layers by using aln/gan superlattice buffer layer. moreover, tem cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. the gan films grown on si with the superlattice buffer also have better surface morphology and optical properties. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; STRUCTURAL-PROPERTIES ; SI ; FILMS ; DISLOCATIONS ; ALN ; DIODES ; MOCVD |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000246580800050 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427013 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu Zhe |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Zhe,Wang Xiao-Liang,Wang Jun-Xi,et al. The influence of aln/gan superlattice intermediate layer on the properties of gan grown on si(111) substrates[J]. Chinese physics,2007,16(5):1467-1471. |
| APA | Liu Zhe,Wang Xiao-Liang,Wang Jun-Xi,Hu Guo-Xin,Guo Lun-Chun,&Li Jin-Min.(2007).The influence of aln/gan superlattice intermediate layer on the properties of gan grown on si(111) substrates.Chinese physics,16(5),1467-1471. |
| MLA | Liu Zhe,et al."The influence of aln/gan superlattice intermediate layer on the properties of gan grown on si(111) substrates".Chinese physics 16.5(2007):1467-1471. |
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来源：半导体研究所
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