Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
文献类型：期刊论文
| 作者 | Shi, L. W.; Chen, Y. H.; Xu, B.; Wang, Z. C.; Wang, Z. G. |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2007-09-01 |
| 卷号 | 39期号:2页码:203-208 |
| 关键词 | Rate equation model Inter-level relaxation Double-state lasing Qd lasers |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2007.04.004 |
| 通讯作者 | Chen, y. h.(yhchen@red.semi.ac.cn) |
| 英文摘要 | Double-state lasing phenomena are easily observed in self-assembled quantum dot (qd) lasers. the effect of inter-level relaxation rate and cavity length on the double-state lasing performance of qd lasers is investigated on the basis of a rate equation model. calculated results show that, for a certain cavity length, the ground state (gs) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. however, as the relaxation rate becomes slower, the ratio of excited state (es) lasing threshold current over the gs one decreases, showing an evident exponential behavior. a relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. in addition, fast inter-level relaxation is favorable for the gs single-mode lasing, and leads to lower wetting layer (wl) carrier occupation probability and higher qd gs capture efficiency and external differential quantum efficiency. besides, the double-state lasing effect strongly depends on the cavity length. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | PHONON BOTTLENECK ; MODULATION ; 1.3-MU-M ; CAPTURE ; WELLS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000249352600005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427018 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, Y. H. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, L. W.,Chen, Y. H.,Xu, B.,et al. Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers[J]. Physica e-low-dimensional systems & nanostructures,2007,39(2):203-208. |
| APA | Shi, L. W.,Chen, Y. H.,Xu, B.,Wang, Z. C.,&Wang, Z. G..(2007).Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers.Physica e-low-dimensional systems & nanostructures,39(2),203-208. |
| MLA | Shi, L. W.,et al."Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers".Physica e-low-dimensional systems & nanostructures 39.2(2007):203-208. |
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来源：半导体研究所
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