Fabrication of needle-shaped gan nanowires by ammoniating ga2o3 films on mgo layers deposited on si (111) substrates
文献类型：期刊论文
| 作者 | Ai, Yujie; Xue, Chengshan; Sun, Chuanwei; Sun, Lili; Zhuang, Huizhao; Wang, Fuxue; Yang, Zhaozhu; Qin, Lixia |
| 刊名 | Materials letters
 |
| 出版日期 | 2007-08-01 |
| 卷号 | 61期号:19-20页码:4103-4106 |
| 关键词 | Epitaxial growth Crystal growth Crystal structure Gan |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2007.01.027 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Needle-shaped gan nanowires have been synthesized on si (111) substrate through ammoniating ga2o3/mgo films under flowing ammonia atmosphere at the temperature of 950 degrees c. the as-synthesized gan nanowires were characterized by x-ray diffraction (xrd), fourier transformed infrared (ftir) spectroscopy, scanning electron microscope (sem) and high-resolution transmission electron microscopy (hrtem). the results demonstrate that these nanowires are hexagonal gan and possess a smooth surface with an average diameter about 200 nm and a length ranging from 5 mu m to 15 mu m. in addition, the diameters of these nanowires diminish gradually. the growth mechanism of crystalline gan nanowires is discussed briefly. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | THIN-FILMS ; GROWTH ; CARBON ; NH3 |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000248155900025 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427033 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Jinan Univ, Sch Informat Sci & Engn, Jinan 250022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ai, Yujie,Xue, Chengshan,Sun, Chuanwei,et al. Fabrication of needle-shaped gan nanowires by ammoniating ga2o3 films on mgo layers deposited on si (111) substrates[J]. Materials letters,2007,61(19-20):4103-4106. |
| APA | Ai, Yujie.,Xue, Chengshan.,Sun, Chuanwei.,Sun, Lili.,Zhuang, Huizhao.,...&Qin, Lixia.(2007).Fabrication of needle-shaped gan nanowires by ammoniating ga2o3 films on mgo layers deposited on si (111) substrates.Materials letters,61(19-20),4103-4106. |
| MLA | Ai, Yujie,et al."Fabrication of needle-shaped gan nanowires by ammoniating ga2o3 films on mgo layers deposited on si (111) substrates".Materials letters 61.19-20(2007):4103-4106. |
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来源：半导体研究所
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