Band gap narrowing in heavily b doped si1-xgex strained layers
文献类型：期刊论文
| 作者 | Yao Fei; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-11-01 |
| 卷号 | 56期号:11页码:6654-6659 |
| 关键词 | Sige layer Strain Band gap narrowing Jain-roulston model |
| ISSN号 | 1000-3290 |
| 通讯作者 | Yao fei(sindy-yf@semi.ac.cn) |
| 英文摘要 | This paper presents a comprehensive study of the effect of heavy b doping and strain in si1-xgex strained layers. on the one hand, bandgap narrowing (bgn) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of sige materials, thus will compensate for part of the strain. taking the strain compensation of b into account for the first time and uesing the with semi-empirical method, the jain-roulston model is modified. and the real bgn distributed between the conduction and valence bands is calculated, which is important for the accurate design of sige hbts. |
| WOS关键词 | SIGE/SI ; SI ; GE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000251093800081 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427036 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yao Fei |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yao Fei,Xue Chun-Lai,Cheng Bu-Wen,et al. Band gap narrowing in heavily b doped si1-xgex strained layers[J]. Acta physica sinica,2007,56(11):6654-6659. |
| APA | Yao Fei,Xue Chun-Lai,Cheng Bu-Wen,&Wang Qi-Ming.(2007).Band gap narrowing in heavily b doped si1-xgex strained layers.Acta physica sinica,56(11),6654-6659. |
| MLA | Yao Fei,et al."Band gap narrowing in heavily b doped si1-xgex strained layers".Acta physica sinica 56.11(2007):6654-6659. |
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来源：半导体研究所
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