Mbe growth of very short period inas/gasb type-ii superlattices on (001) gaas substrates
文献类型：期刊论文
| 作者 | Hao, Ruiting; Xu, Yingqiang; Zhou, Zhiqiang; Ren, Zhengwei; Ni, Haiqiao; He, Zhenhong; Niu, Zhichuan |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2007-11-07 |
| 卷号 | 40期号:21页码:6690-6693 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/40/21/031 |
| 通讯作者 | Niu, zhichuan(zcniu@red.semi.ac.cn) |
| 英文摘要 | First, gasb epilayers were grown on (001) gaas substrates by molecular beam epitaxy. we determined that the gasb layers had very smooth surfaces using atomic force microscopy. then, very short period inas/ gasb superlattices (sls) were grown on the gasb buffer layer. the optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. in order to determine the interface of sls, the samples were tested by raman-scattering spectra at room temperature. results indicated that the peak wavelength of sls with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. the sl interface between inas and gasb is insb-like. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; INAS/GA1-XINXSB SUPERLATTICE ; INFRARED PHOTODIODES ; QUANTUM-WELLS ; DETECTORS ; GASB ; INTERFACE ; LAYERS ; INAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000250605300033 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427037 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu, Zhichuan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hao, Ruiting,Xu, Yingqiang,Zhou, Zhiqiang,et al. Mbe growth of very short period inas/gasb type-ii superlattices on (001) gaas substrates[J]. Journal of physics d-applied physics,2007,40(21):6690-6693. |
| APA | Hao, Ruiting.,Xu, Yingqiang.,Zhou, Zhiqiang.,Ren, Zhengwei.,Ni, Haiqiao.,...&Niu, Zhichuan.(2007).Mbe growth of very short period inas/gasb type-ii superlattices on (001) gaas substrates.Journal of physics d-applied physics,40(21),6690-6693. |
| MLA | Hao, Ruiting,et al."Mbe growth of very short period inas/gasb type-ii superlattices on (001) gaas substrates".Journal of physics d-applied physics 40.21(2007):6690-6693. |
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来源：半导体研究所
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