Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd
文献类型：期刊论文
| 作者 | Wang, Xiaoliang; Hu, Guoxin; Ma, Zhiyong; Ran, Junxue; Wang, Cuimei; Mao, Hongling; Tang, Han; Li, Hanping; Wang, Junxi; Zeng, Yiping |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298页码:835-839 |
| 关键词 | 2deg Mocvd Algan/gan Hemt Power device |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.10.219 |
| 通讯作者 | Wang, xiaoliang(xlwang@red.semi.ac.cn) |
| 英文摘要 | Enhancement of the electrical properties in an algan/gan high electron mobility transistor (hemt) structures was demonstrated by employing the combination of a high mobility gan channel layer and an aln interlayer. the structures were grown on 50 mm semi-insulating (si) 6h-sic substrates by metalorganic chemical vapor deposition (mocvd). the room temperature (rt) two-dimensional electron gas (2deg) mobility was as high as 2215 cm(2)/v s, with a 2deg concentration of 1.044 x 10(13)cm(-2). the 50 mm hemt wafer exhibited a low average sheet resistance of 251.0 omega/square, with a resistance uniformity of 2.02%. the 0.35 pin gate length hemt devices based on this material structure, exhibited a maximum drain current density of 1300 ma/mm, a maximum extrinsic transconductance of 314 ms/mm, a current gain cut-off frequency of 28 ghz and a maximum oscillation frequency of 60 ghz. the maximum output power density of 4.10 w/mm was achieved at 8 ghz, with a power gain of 6.13 db and a power added efficiency (pae) of 33.6%. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | HETEROJUNCTION ; PERFORMANCE ; PLATE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244622600195 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427054 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Xiaoliang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Xiaoliang,Hu, Guoxin,Ma, Zhiyong,et al. Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd[J]. Journal of crystal growth,2007,298:835-839. |
| APA | Wang, Xiaoliang.,Hu, Guoxin.,Ma, Zhiyong.,Ran, Junxue.,Wang, Cuimei.,...&Wang, Zhanguo.(2007).Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd.Journal of crystal growth,298,835-839. |
| MLA | Wang, Xiaoliang,et al."Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd".Journal of crystal growth 298(2007):835-839. |
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来源：半导体研究所
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