The effects of lt aln buffer thickness on the optical properties of algan grown by mocvd and al composition inhomogeneity analysis
文献类型：期刊论文
| 作者 | Wang, X. L.; Zhao, D. G.; Jahn, U.; Ploog, K.; Jiang, D. S.; Yang, H.; Liang, J. W. |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2007-02-21 |
| 卷号 | 40期号:4页码:1113-1117 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/40/4/031 |
| 通讯作者 | Wang, x. l.(wxl@mail.semi.ac.cn) |
| 英文摘要 | We have investigated the growth of algan epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature ( lt) aln buffer thicknesses. combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of algan films in a microscopic scale. it is found that the suitable thickness of the lt aln buffer for high quality algan growth is around 20 nm. the al compositional inhomogeneity of the algan epilayer is attributed to the low lateral mobility of al adatoms on the growing surface. |
| WOS关键词 | PHOTODIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000245274300032 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427055 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, X. L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany |
| 推荐引用方式 GB/T 7714 | Wang, X. L.,Zhao, D. G.,Jahn, U.,et al. The effects of lt aln buffer thickness on the optical properties of algan grown by mocvd and al composition inhomogeneity analysis[J]. Journal of physics d-applied physics,2007,40(4):1113-1117. |
| APA | Wang, X. L..,Zhao, D. G..,Jahn, U..,Ploog, K..,Jiang, D. S..,...&Liang, J. W..(2007).The effects of lt aln buffer thickness on the optical properties of algan grown by mocvd and al composition inhomogeneity analysis.Journal of physics d-applied physics,40(4),1113-1117. |
| MLA | Wang, X. L.,et al."The effects of lt aln buffer thickness on the optical properties of algan grown by mocvd and al composition inhomogeneity analysis".Journal of physics d-applied physics 40.4(2007):1113-1117. |
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来源：半导体研究所
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